5秒后页面跳转
捷配首页

Datasheet > TM124FBK32H-60
TM124FBK32H-60 PDF预览

TM124FBK32H-60

更新时间： 2024-11-06 14:45:15
品牌 Logo 应用领域
德州仪器 - TI 动态存储器内存集成电路
页数 文件大小 规格书
9页 134K
描述
1MX32 EDO DRAM MODULE, 60ns, SMA72, SIMM-72

阅读下载

中文翻译

获取价格

TM124FBK32H-60 技术参数

是否无铅： 含铅生命周期：Obsolete
零件包装代码：SIMM包装说明：SIMM, SSIM72
针数：72Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.02
风险等级：5.84访问模式：FAST PAGE WITH EDO
最长访问时间：60 ns其他特性：RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
备用内存宽度：16I/O 类型：COMMON
JESD-30 代码：R-XSMA-N72内存密度：33554432 bit
内存集成电路类型：EDO DRAM MODULE内存宽度：32
功能数量：1端口数量：1
端子数量：72字数：1048576 words
字数代码：1000000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：1MX32输出特性：3-STATE
封装主体材料：UNSPECIFIED封装代码：SIMM
封装等效代码：SSIM72封装形状：RECTANGULAR
封装形式：MICROELECTRONIC ASSEMBLY电源：5 V
认证状态：Not Qualified刷新周期：1024
座面最大高度：25.4 mm自我刷新：NO
最大待机电流：0.002 A子类别：DRAMs
最大压摆率：0.32 mA最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：NO技术：CMOS
温度等级：COMMERCIAL端子形式：NO LEAD
端子节距：1.27 mm端子位置：SINGLE
Base Number Matches：1

TM124FBK32H-60 数据手册

 浏览型号TM124FBK32H-60的Datasheet PDF文件第2页浏览型号TM124FBK32H-60的Datasheet PDF文件第3页浏览型号TM124FBK32H-60的Datasheet PDF文件第4页浏览型号TM124FBK32H-60的Datasheet PDF文件第5页浏览型号TM124FBK32H-60的Datasheet PDF文件第6页浏览型号TM124FBK32H-60的Datasheet PDF文件第7页 
TM124FBK32H, TM124FBK32I 1048576 BY 32-BIT  
TM248GBK32H, TM248GBK32I 2097152 BY 32-BIT  
DYNAMIC RAM MODULES  
SMMS678 – APRIL 1997  
Organization  
Presence Detect  
TM124FBK32H/I . . . 1 048 576 × 32  
TM248GBK32H/I . . . 2 097 152 × 32  
JEDEC First Generation 72-Pin SIMM  
Pinout  
Single 5-V Power Supply (±10% Tolerance)  
Performance Ranges:  
72-Pin Single In-Line Memory Module  
(SIMM) for Use With Socket  
ACCESS ACCESS ACCESS EDO  
TIME  
TIME  
TIME CYCLE  
t
t
t
t
RAC  
AA  
CAC  
HPC  
TM124FBK32H/I – Uses Two 16M-Bit  
Dynamic Random-Access Memories  
(DRAMs) in Plastic Small-Outline J-Lead  
(SOJ) Package  
(MAX)  
’124FBK32H/I-50 50 ns  
’124FBK32H/I-60 60 ns  
’124FBK32H/I-70 70 ns  
’248GBK32H/I-50 50 ns  
’248GBK32H/I-60 60 ns  
’248GBK32H/I-70 70 ns  
(MAX)  
25 ns  
30 ns  
35 ns  
25 ns  
30 ns  
35 ns  
(MAX)  
13 ns  
15 ns  
18 ns  
13 ns  
15 ns  
18 ns  
(MIN)  
20 ns  
25 ns  
30 ns  
20 ns  
25 ns  
30 ns  
TM248GBK32H/I – Uses Four 16M-Bit  
DRAMs in Plastic SOJ Package  
Long Refresh Period  
16 ms (1024 Cycles)  
Low Power Dissipation  
All Inputs, Outputs, Clocks Fully  
TTL-Compatible  
Operating Free-Air Temperature Range  
0°C to 70°C  
†
3-State Output  
Gold-Tabbed Versions Available:  
TM124FBK32H  
TM248GBK32H  
Common CAS Control for Eight Common  
Data-In and Data-Out Lines in Four Blocks  
Tin-Lead Solder-Tabbed Versions Available:  
TM124FBK32I  
Extended Data Out (EDO) Operation With  
CAS-Before-RAS (CBR), RAS-Only, Hidden  
Refresh, and Self Refresh  
TM248GBK32I  
description  
TM124FBK32H/I  
The TM124FBK32H/I is a 4M-byte DRAM organized as four times 1048576 × 8 in a 72-pin SIMM. The SIMM  
is composed of two TMS418169ADZ 1 048 576 × 16-bit DRAMs, each in a 42-lead plastic SOJ package  
mountedonasubstratewithdecouplingcapacitors. TheTMS418169ADZisdescribedintheTMS418169Adata  
sheet (literature number SMKS892). The TM124FBK32H/I SIMM is available in the single-sided BK-leadless  
module for use with sockets.  
TM248GBK32H/I  
The TM248GBK32H/I is an 8M-byte DRAM organized as four times 2 097 152 × 8 in a 72-pin SIMM. The SIMM  
is composed of four TMS418169ADZ 1 048 576 × 16-bit DRAMs, each in a 42-lead plastic SOJ package  
mountedonasubstratewithdecouplingcapacitors. TheTMS418169ADZisdescribedintheTMS418169Adata  
sheet (literature number SMKS892). The TM248GBK32H/I SIMM is available in the double-sided BK-leadless  
module for use with sockets.  
operation  
The TM124FBK32H/I operates as two TMS418169ADZs connected as shown in the functional block diagram  
and in Table 1. The TM248GBK32H/I operates as four TMS418169ADZs connected as shown in the functional  
block diagram and in Table 1. The common I/O feature dictates the use of early-write cycles to prevent  
contention on D and Q.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
†
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...9

中文翻译

下载PDF

与TM124FBK32H-60相关器件

型号 品牌 获取价格 描述 数据表
TM124FBK32I-70 TI

获取价格

 		1MX32 EDO DRAM MODULE, 70ns, SMA72, SIMM-72
TM124FBK32S-60 TI

获取价格

 		DYNAMIC RAM MODULES
TM124FBK32S-60L TI

获取价格

 		1MX32 EDO DRAM MODULE, 60ns, SMA72, SIMM-72
TM124FBK32S-70 TI

获取价格

 		DYNAMIC RAM MODULES
TM124FBK32S-80 TI

获取价格

 		DYNAMIC RAM MODULES
TM124FBK32U-60 TI

获取价格

 		1MX32 EDO DRAM MODULE, 60ns, SMA72, SIMM-72
TM124GU8A TI

获取价格

 		1 048 576-WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORY MODULE
TM124GU8A-10 TI

获取价格

 		1MX8 FAST PAGE DRAM MODULE, 100ns, SMA30, SIP-30
TM124GU8A-6 TI

获取价格

 		1MX8 FAST PAGE DRAM MODULE, 60ns, SMA30, SIP-30
TM124GU8A-60 TI

获取价格

 		1 048 576-WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORY MODULE

与TM124FBK32H-60相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证