TM124MBJ36F, TM124MBJ36U 1048576 BY 36-BIT DYNAMIC RAM MODULE
TM248NBJ36F, TM248NBJ36U 2097152 BY 36-BIT DYNAMIC RAM MODULE
SMMS662 – MAY 1996
Organization
Presence Detect
TM124MBJ36F . . . 1 048 576 × 36
TM248NBJ36F . . . 2 097 152 × 36
Performance Ranges:
ACCESS ACCESS ACCESS READ
TIME
TIME
TIME
OR
Single 5-V Power Supply (±10% Tolerance)
t
t
t
WRITE
CYCLE
(MIN)
RAC
AA
CAC
72-Pin Single In-Line Memory Module
(SIMM) for Use With Socket
(MAX)
’124MBJ36F-60 60 ns
’124MBJ36F-70 70 ns
’124MBJ36F-80 80 ns
’248NBJ36F-60 60 ns
’248NBJ36F-70 70 ns
’248NBJ36F-80 80 ns
(MAX)
30 ns
35 ns
40 ns
30 ns
35 ns
40 ns
(MAX)
15 ns
18 ns
20 ns
15 ns
18 ns
20 ns
110 ns
130 ns
150 ns
110 ns
130 ns
150 ns
TM124MBJ36F – Utilizes Two 16-Megabit
and One 4-Megabit Dynamic
Random-Access Memories (DRAMs) in
Plastic Small-Outline J-Lead (SOJ)
Packages
TM248NBJ36F – Utilizes Four 16-Megabit
and Two 4-Megabit DRAMs in Plastic SOJ
Packages
Low Power Dissipation
Operating Free-Air Temperature Range
0°C to 70°C
Long Refresh Period . . . 16 ms
(1024 Cycles)
†
Gold-Tabbed Versions Available:
– TM124MBJ36F
– TM248NBJ36F
All Inputs, Outputs, Clocks Fully
TTL-Compatible
Tin-Lead (Solder) Tabbed Versions
Available:
– TM124MBJ36U
3-State Output
Common CAS Control for Nine Common
Data-In and Data-Out Lines in Four Blocks
– TM248NBJ36U
Enhanced Page-Mode Operation With
CAS-Before-RAS (CBR), RAS-Only, and
Hidden Refresh
description
TM124MBJ36F
The TM124MBJ36F is a 4-MByte DRAM organized as four times 1048576 × 9 in a 72-pin SIMM. The SIMM
is composed of two TMS418160DZ 1 048 576 × 16-bit DRAMs, each in a 42-lead plastic SOJ package, and
one TMS44460DJ 1048576 × 4-bit DRAM in a 24/26-lead plastic SOJ package mounted on a substrate with
decoupling capacitors. The TMS418160DZ and TMS44460DJ are described in the TMS418160 and
TMS44460 data sheets, respectively. The TM124MBJ36F SIMM is available in the single-sided BJ leadless
module for use with sockets.
TM248NBJ36F
The TM248NBJ36F is an 8-MByte DRAM organized as four times 2097152 × 9 in a 72-pin SIMM. The SIMM
is composed of four TMS418160DZ 1 048 576 × 16-bit DRAMs, each in a 42-lead plastic SOJ package, and
two TMS44460DJ 1048576 × 4-bit DRAMs, each in a 24/26-lead plastic SOJ package mounted on a substrate
with decoupling capacitors. The TMS418160DZ and TMS44460DJ are described in the TMS418160 and
TMS44460 data sheets, respectively. The TM248NBJ36F SIMM is available in the double-sided BJ leadless
module for use with sockets.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
†
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.
Copyright 1996, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
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