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TM124MBK36BK36E-80

更新时间： 2024-11-06 14:45:15
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TM124MBK36BK36E-80

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TM124MBK36BK36E-80 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknown风险等级：5.84
Base Number Matches：1

TM124MBK36BK36E-80 数据手册

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TM124MBK36E, TM124MBK36T 1048576 BY 36-BIT DYNAMIC RAM MODULE  
TM248NBK36E, TM248NBK36T 2097152 BY 36-BIT DYNAMIC RAM MODULE  
SMMS139 – MARCH 1994  
•
Organization  
TM124MBK36E . . . 1 048 576 × 36  
TM248NBK36E . . . 2 097 152 × 36  
•
Enhanced Page-Mode Operation With  
CAS-Before-RAS, RAS-Only, and Hidden  
Refresh  
•
•
Single 5-V Power Supply (±10% Tolerance)  
•
•
Presence Detect  
72-Pin Leadless Single-In-Line Memory  
Module (SIMM)  
Performance Ranges:  
ACCESS ACCESS ACCESS READ  
TIME  
TIME  
TIME  
OR  
•
TM124MBK36E – Utilizes Eight 4-Megabit  
Dynamic RAMs in Plastic Small-Outline  
J-Lead (SOJ) Packages and Two 2-Megabit  
Dual-CAS Dynamic RAMs in Plastic  
t
t
t
WRITE  
CYCLE  
(MIN)  
RAC  
AA  
CAC  
(MAX)  
’124MBK36E-60 60 ns  
’124MBK36E-70 70 ns  
’124MBK36E-80 80 ns  
’248NBK36E-60 60 ns  
’248NBK36E-70 70 ns  
’248NBK36E-80 80 ns  
(MAX)  
30 ns  
35 ns  
40 ns  
30 ns  
35 ns  
40 ns  
(MAX)  
15 ns  
18 ns  
20 ns  
15 ns  
18 ns  
20 ns  
110 ns  
130 ns  
150 ns  
110 ns  
130 ns  
150 ns  
Small-Outline J-Lead (SOJ) Packages  
•
TM248NBK36E – Utilizes Sixteen 4-Megabit  
Dynamic RAMs in Plastic Small-Outline  
J-Lead (SOJ) Packages and Four 2-Megabit  
Dual-CAS Dynamic RAMs in Plastic  
•
•
Low Power Dissipation  
Small-Outline J-Lead (SOJ) Packages  
Operating Free-Air Temperature Range:  
•
•
Long Refresh Period . . . 16 ms  
(1024 Cycles)  
0°C to 70°C  
†
•
•
Gold-Tabbed Versions Available:  
– TM124MBK36E  
– TM248NBK36E  
All Inputs, Outputs, Clocks Fully TTL  
Compatible  
•
•
3-State Output  
Tin-Lead (Solder) Tabbed Versions  
Available:  
– TM124MBK36T  
Common CAS Control for Nine Common  
Data-In and Data-Out Lines in Four Blocks  
– TM248NBK36T  
description  
The TM124MBK36E is a dynamic random-access memory (RAM) organized as four times 1048576 × 9  
(bit 9 is generally used for parity) in a 72-pin leadless single-in-line memory module (SIMM). The SIMM is  
composed of eight TMS44400DJ, 1 048 576 × 4-bit dynamic RAMs, each in a 20/26-lead plastic small-outline  
J-lead (SOJ) package, and two TMS42260DJ, 1 048 576 × 2-bit dual-CAS dynamic RAMs, each in a 24/26-lead  
plastic small-outline J-lead (SOJ) package, mounted on a substrate with decoupling capacitors. Each  
TMS44400DJ or TMS42260DJ is described in the TMS44400 or TMS42260 data sheet, respectively.  
The TM124MBK36E is available in the single-sided BK leadless module for use with sockets. It features RAS  
access times of 60 ns, 70 ns, and 80 ns. This device is characterized for operation from 0°C to 70°C.  
The TM248NBK36E is a dynamic random-access memory (RAM) organized as four times 2 097 152 × 9 (bit 9  
is generally used for parity) in a 72-pin leadless single-in-line memory module (SIMM). The SIMM is composed  
of sixteen TMS44400DJ, 1 048 576 × 4-bit dynamic RAMs, each in a 20/26-lead plastic small-outline J-lead  
(SOJ)package, andfourTMS42260DJ, 1 048 576× 2-bitdual-CASdynamicRAMs, eachina24/26-leadplastic  
small-outline J-lead (SOJ) package, mounted on a substrate with decoupling capacitors. Each TMS44400DJ  
or TMS42260DJ is described in the TMS44400 or TMS42260 data sheet, respectively.  
The TM248NBK36E is available in the double-sided BK leadless module for use with sockets. It features RAS  
access times of 60 ns, 70 ns, and 80 ns. This device is rated for operation from 0°C to 70°C.  
†
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.  
Copyright 1994, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...12

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