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TM124MBK36U-60 PDF预览

TM124MBK36U-60

更新时间: 2024-11-09 15:54:39
品牌 Logo 应用领域
德州仪器 - TI 动态存储器内存集成电路
页数 文件大小 规格书
9页 131K
描述
1MX36 FAST PAGE DRAM MODULE, 60ns, SMA72, SIMM-72

TM124MBK36U-60 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:SIMM包装说明:SIMM, SSIM72
针数:72Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.84访问模式:FAST PAGE
最长访问时间:60 ns其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型:COMMONJESD-30 代码:R-XSMA-N72
内存密度:37748736 bit内存集成电路类型:FAST PAGE DRAM MODULE
内存宽度:36功能数量:1
端口数量:1端子数量:72
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX36
输出特性:3-STATE封装主体材料:UNSPECIFIED
封装代码:SIMM封装等效代码:SSIM72
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
电源:5 V认证状态:Not Qualified
刷新周期:1024座面最大高度:25.527 mm
最大待机电流:0.003 A子类别:DRAMs
最大压摆率:0.285 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子节距:1.27 mm端子位置:SINGLE
Base Number Matches:1

TM124MBK36U-60 数据手册

 浏览型号TM124MBK36U-60的Datasheet PDF文件第2页浏览型号TM124MBK36U-60的Datasheet PDF文件第3页浏览型号TM124MBK36U-60的Datasheet PDF文件第4页浏览型号TM124MBK36U-60的Datasheet PDF文件第5页浏览型号TM124MBK36U-60的Datasheet PDF文件第6页浏览型号TM124MBK36U-60的Datasheet PDF文件第7页 
TM124MBK36F, TM124MBK36U 1048576 BY 36-BIT DRAM MODULE  
TM248NBK36F, TM248NBK36U 2097152 BY 36-BIT DRAM MODULE  
SMMS650A – APRIL 1995 – REVISED JUNE 1995  
Organization  
Presence Detect  
TM124MBK36F . . . 1 048 576 × 36  
TM248NBK36F . . . 2 097 152 × 36  
Performance Ranges:  
ACCESS ACCESS ACCESS READ  
TIME  
TIME  
TIME  
OR  
Single 5-V Power Supply (±10% Tolerance)  
t
t
t
WRITE  
CYCLE  
(MIN)  
RAC  
AA  
CAC  
72-Pin Single-In-Line Memory Module  
(SIMM) for Use With Socket  
(MAX)  
’124MBK36F-60 60 ns  
’124MBK36F-70 70 ns  
’124MBK36F-80 80 ns  
’248NBK36F-60 60 ns  
’248NBK36F-70 70 ns  
’248NBK36F-80 80 ns  
(MAX)  
30 ns  
35 ns  
40 ns  
30 ns  
35 ns  
40 ns  
(MAX)  
15 ns  
18 ns  
20 ns  
15 ns  
18 ns  
20 ns  
110 ns  
130 ns  
150 ns  
110 ns  
130 ns  
150 ns  
TM124MBK36F – Utilizes Two 16-Megabit  
and One 4-Megabit DRAMs in Plastic  
Small-Outline J-Lead (SOJ) Packages  
TM248NBK36F – Utilizes Four 16-Megabit  
and Two 4-Megabit DRAMs in Plastic  
Small-Outline J-Lead (SOJ) Packages  
Low Power Dissipation  
Long Refresh Period . . . 16 ms  
(1024 Cycles)  
Operating Free-Air Temperature Range:  
0°C to 70°C  
All Inputs, Outputs, Clocks Fully TTL  
Compatible  
Gold-Tabbed Versions Available:  
– TM124MBK36F  
– TM248NBK36F  
3-State Output  
Common CAS Control for Nine Common  
Data-In and Data-Out Lines in Four Blocks  
Tin-Lead (Solder) Tabbed Versions  
Available:  
Enhanced Page-Mode Operation With  
CAS-Before-RAS (CBR), RAS-Only, and  
Hidden Refresh  
– TM124MBK36U  
– TM248NBK36U  
description  
TM124MBK36F  
The TM124MBK36F is a 4-MByte dynamic random-access memory (DRAM) organized as four times  
1048576 × 9 in a 72-pin single-in-line memory module (SIMM). The SIMM is composed of two TMS418160DZ,  
1 048 576 × 16-bit dynamic RAMs, each in a 42-lead plastic small-outline J-lead (SOJ) package and one  
TMS44460DJ, 1048576 × 4-bit DRAM in a 24/26-lead plastic small-outline J-lead (SOJ) package mounted on  
a substrate with decoupling capacitors. The TMS418160DZ and TMS44460DJ are described in the  
TMS418160 and TMS44460 data sheets, respectively. The TM124MBK36F SIMM is available in the  
single-sided BK leadless module for use with sockets.  
TM248NBK36F  
The TM248NBK36F is an 8-MByte DRAM organized as four times 2097152 × 9 in a 72-pin single-in-line  
memory module (SIMM). The SIMM is composed of four TMS418160DZ, 1 048 576 × 16-bit dynamic RAMs,  
each in a 42-lead plastic small-outline J-lead (SOJ) package and two TMS44460DJ, 1048576 × 4-bit DRAMs,  
each in a 24/26-lead plastic small-outline (SOJ) package mounted on a substrate with decoupling capacitors.  
The TMS418160DZ and TMS44460DJ are described in the TMS418160 and TMS44460 data sheets,  
respectively. The TM248NBK36F SIMM is available in the double-sided BK leadless module for use with  
sockets.  
operation  
The TM124MBK36F operates as two TMS418160DZs and one TMS44460DJ connected as shown in the  
functional block diagram and NO TAG. The TM248NBK36F operates as four TMS418160DZs and two  
TMS44460DJs connected as shown in the functional block diagram and NO TAG. The common I/O feature  
dictates the use of early write cycles to prevent contention on D and Q.  
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.  
Copyright 1995, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443  

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