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TISP3180F3D

更新时间： 2024-09-15 19:50:15
品牌 Logo 应用领域
德州仪器 - TI 光电二极管
页数 文件大小 规格书
16页 385K
描述
180V, 4A, SILICON SURGE PROTECTOR, SOP-8

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中文翻译

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TISP3180F3D 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOIC包装说明：SMALL OUTLINE, R-PDSO-G8
针数：8Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.30.00.80
风险等级：5.8其他特性：UL RECOGNIZED
最大转折电压：180 V配置：SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
最大断态直流电压：145 VJESD-30 代码：R-PDSO-G8
通态非重复峰值电流：4 A元件数量：2
端子数量：8封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：SILICON SURGE PROTECTORBase Number Matches：1

TISP3180F3D 数据手册

 浏览型号TISP3180F3D的Datasheet PDF文件第2页浏览型号TISP3180F3D的Datasheet PDF文件第3页浏览型号TISP3180F3D的Datasheet PDF文件第4页浏览型号TISP3180F3D的Datasheet PDF文件第5页浏览型号TISP3180F3D的Datasheet PDF文件第6页浏览型号TISP3180F3D的Datasheet PDF文件第7页 
TISP3125F3, TISP3150F3, TISP3180F3  
DUAL SYMMETRICAL TRANSIENT  
VOLTAGE SUPPRESSORS  
MARCH 1994 - REVISED SEPTEMBER 1997  
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION  
●
Ion-Implanted Breakdown Region  
Precise and Stable Voltage  
D PACKAGE  
(TOP VIEW)  
Low Voltage Overshoot under Surge  
1
2
3
4
8
7
6
5
G
G
G
G
T
NC  
NC  
R
V
V
(BO)  
DRM  
DEVICE  
V
V
‘3125F3  
‘3150F3  
‘3180F3  
100  
120  
145  
125  
150  
180  
MDXXAE  
NC - No internal connection  
P PACKAGE  
(TOP VIEW)  
●
●
Planar Passivated Junctions  
Low Off-State Current < 10 µA  
1
2
T
8
7
6
5
T
Rated for International Surge Wave Shapes  
G
G
I
TSP  
WAVE SHAPE  
STANDARD  
3
4
G
R
G
R
A
2/10 µs  
8/20 µs  
FCC Part 68  
ANSI C62.41  
FCC Part 68  
FCC Part 68  
RLM 88  
175  
120  
60  
MDXXAF  
Specified T terminal ratings require connection of pins 1 and 8.  
Specified R terminal ratings require connection of pins 4 and 5.  
10/160 µs  
10/560 µs  
0.5/700 µs  
45  
38  
SL PACKAGE  
(TOP VIEW)  
FTZ R12  
50  
10/700 µs  
VDE 0433  
50  
CCITT IX K17/K20  
REA PE-60  
50  
1
2
3
T
G
R
10/1000 µs  
35  
●
Surface Mount and Through-Hole Options  
MDXXAG  
MD23AA  
PACKAGE  
Small-outline  
Small-outline taped  
and reeled  
PART # SUFFIX  
D
device symbol  
DR  
T
R
Plastic DIP  
P
Single-in-line  
SL  
●
UL Recognized, E132482  
description  
These medium voltage dual symmetrical  
SD3XAA  
transient voltage suppressor devices are  
designed to protect ISDN and telecommunication  
applications with ground backed ringing against  
transients caused by lightning strikes and a.c.  
power lines. Offered in three voltage variants to  
meet battery and protection requirements they  
are guaranteed to suppress and withstand the  
listed international lightning surges in both  
polarities. Transients are initially clipped by  
breakdown clamping until the voltage rises to the  
breakover level, which causes the device to  
G
Terminals T, R and G correspond to the  
alternative line designators of A, B and C  
crowbar. The high crowbar holding current  
prevents d.c. latchup as the current subsides.  
These monolithic protection devices are  
fabricated in ion-implanted planar structures to  
Copyright © 1997 Texas Instruments Incorporated  
PRODUCTION DATA information is current as of  
publication date. Products conform to specifications  
per the terms of Texas Instruments standard warranty.  
Production processing does not necessarily include  
testing of all parameters.  
Designed and manufactured by Power  
Innovations, Bedford, UK. under  
private label for Texas Instruments.  
1
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TISP3180F3DR-S BOURNS

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TISP3180H3SL-S BOURNS

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 		Silicon Surge Protector, 180V V(BO) Max, 60A, ROHS COMPLIANT, PLASTIC, SIP-3
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