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TISP3210H3SL

更新时间： 2024-11-05 22:33:07
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POINN /
页数 文件大小 规格书
12页 227K
描述
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

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中文翻译

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TISP3210H3SL 技术参数

生命周期：Transferred包装说明：IN-LINE, R-PSIP-T3
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.79JESD-30 代码：R-PSIP-T3
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
触发设备类型：SILICON SURGE PROTECTORBase Number Matches：1

TISP3210H3SL 数据手册

 浏览型号TISP3210H3SL的Datasheet PDF文件第2页浏览型号TISP3210H3SL的Datasheet PDF文件第3页浏览型号TISP3210H3SL的Datasheet PDF文件第4页浏览型号TISP3210H3SL的Datasheet PDF文件第5页浏览型号TISP3210H3SL的Datasheet PDF文件第6页浏览型号TISP3210H3SL的Datasheet PDF文件第7页 
TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL  
TISP3250H3SL THRU TISP3350H3SL  
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS  
Copyright © 1999, Power Innovations Limited, UK  
JANUARY 1999 - REVISED MAY 1999  
TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS  
●
Ion-Implanted Breakdown Region  
- Precise DC and Dynamic Voltages  
SL PACKAGE  
(TOP VIEW)  
V
V
(BO)  
DRM  
1
2
3
T
G
R
DEVICE  
V
V
‘3070  
‘3080  
‘3095  
‘3125  
‘3135  
‘3145  
‘3180  
‘3210  
‘3250  
‘3290  
‘3350  
58  
65  
75  
70  
80  
95  
MDXXAG  
100  
110  
120  
145  
160  
190  
220  
275  
125  
135  
145  
180  
210  
250  
290  
350  
device symbol  
T
R
●
Rated for International Surge Wave Shapes  
- Guaranteed -40 °C to +85 °C Performance  
SD3XAA  
G
Terminals T, R and G correspond to the  
alternative line designators of A, B and C  
I
TSP  
WAVE SHAPE  
STANDARD  
A
2/10 µs  
8/20 µs  
GR-1089-CORE  
IEC 61000-4-5  
FCC Part 68  
500  
300  
250  
●
●
3-Pin Through-Hole Packaging  
- Compatible with TO-220AB pin-out  
- Low Height. . . . . . . . . . . . . . . . . . . . .8.3 mm  
10/160 µs  
FCC Part 68  
10/700 µs  
200  
ITU-T K20/21  
FCC Part 68  
10/560 µs  
160  
100  
Low Differential Capacitance  
- Value at -2 V/-50 V Bias. . . . . . . .67 pF max.  
10/1000 µs  
GR-1089-CORE  
description  
The TISP3xxxH3SL limits overvoltages between the telephone line Ring and Tip conductors and Ground.  
Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or  
conducted on to the telephone line.  
The protector consists of two symmetrical voltage-triggered bidirectional thyristors. Overvoltages are initially  
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to  
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the  
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup  
as the diverted current subsides.  
This TISP3xxxH3SL range consists of eleven voltage variants to meet various maximum system voltage  
levels (58 V to 275 V). They are guaranteed to voltage limit and withstand the listed international lightning  
surges in both polarities. These high current protection devices are in a 3-pin single-in-line (SL) plastic  
package and are supplied in tube pack. For alternative impulse rating, voltage and holding current values in  
SL packaged protectors, consult the factory. For lower rated impulse currents in the SL package, the 35 A  
10/1000 TISP3xxxF3SL series is available.  
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and  
matched breakover control and are virtually transparent to the system in normal operation.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1
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