Datasheet > TISP3290F3

TISP3290F3

更新时间： 2024-11-05 22:36:11

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DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

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中文翻译

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数据手册

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TISP3290F3 数据手册

TISP3240F3, TISP3260F3, TISP3290F3, TISP3320F3, TISP3380F3

DUAL SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

TELECOMMUNICATION SYSTEM SECONDARY PROTECTION

●

Ion-Implanted Breakdown Region

Precise and Stable Voltage

D PACKAGE

(TOP VIEW)

Low Voltage Overshoot under Surge

V_DRMV_(BO)

DEVICE

‘3240F3

‘3260F3

‘3290F3

‘3320F3

‘3380F3

180

200

220

240

270

240

260

290

320

380

MDXXAE

NC - No internal connection

P PACKAGE

(TOP VIEW)

●

Planar Passivated Junctions

Low Off-State Current < 10 µA

Rated for International Surge Wave Shapes

I_TSP

WAVE SHAPE

STANDARD

MDXXAF

175

120

Specified T terminal ratings require connection of pins 1 and 8.

Specified R terminal ratings require connection of pins 4 and 5.

2/10 µs

8/20 µs

FCC Part 68

ANSI C62.41

FCC Part 68

RLM 88

10/160 µs

10/560 µs

0.5/700 µs

SL PACKAGE

(TOP VIEW)

FTZ R12

10/700 µs

VDE 0433

CCITT IX K17/K20

REA PE-60

10/1000 µs

MDXXAG

MD23AA

●

Surface Mount and Through-Hole Options

device symbol

PACKAGE

Small-outline

Small-outline taped

and reeled

PART # SUFFIX

Plastic DIP

Single-in-line

●

UL Recognized, E132482

description

These high voltage dual symmetrical transient

SD3XAA

voltage suppressor devices are designed to

protect telecommunication applications with

ground backed ringing against transients caused

by lightning strikes and a.c. power lines. Offered

in five voltage variants to meet battery and

protection requirements they are guaranteed to

suppress and withstand the listed international

lightning surges in both polarities. Transients are

initially clipped by breakdown clamping until the

voltage rises to the breakover level, which

Terminals T, R and G correspond to the

alternative line designators of A, B and C

causes the device to crowbar. The high crowbar

holding current prevents d.c. latchup as the

current subsides.

These monolithic protection devices are

fabricated in ion-implanted planar structures to

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7...17

中文翻译

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与TISP3290F3相关器件

型号	品牌	获取价格	描述	数据表
TISP3290F3D	BOURNS	获取价格	暂无描述
TISP3290F3DR	BOURNS	获取价格	HIGH-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP3290F3DR-S	BOURNS	获取价格	HIGH-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP3290F3P	BOURNS	获取价格	暂无描述
TISP3290F3SL	BOURNS	获取价格	HIGH-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP3290F3SL-S	BOURNS	获取价格	HIGH-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP3290H3	BOURNS	获取价格	DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP3290H3SL	TI	获取价格	290V, 60A, SILICON SURGE PROTECTOR, PLASTIC, SIP-3
TISP3290H3SL	BOURNS	获取价格	暂无描述
TISP3290H3SLL	BOURNS	获取价格	Silicon Surge Protector, 290V V(BO) Max, 60A, PLASTIC, SIP-3

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