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TISP3200T3BJ

更新时间： 2024-11-06 19:00:15
品牌 Logo 应用领域
伯恩斯 - BOURNS 光电二极管
页数 文件大小 规格书
9页 1179K
描述
Silicon Surge Protector, 200V V(BO) Max, 30A, PLASTIC, SMB, MODIFIED DO-214AA, 3 PIN

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TISP3200T3BJ 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DO-214AA包装说明：SMALL OUTLINE, R-PDSO-C3
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.30.00.80
风险等级：5.87其他特性：UL RECOGNIZED
最大转折电压：200 V配置：SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
最大断态直流电压：155 VJESD-30 代码：R-PDSO-C3
通态非重复峰值电流：30 A元件数量：2
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
表面贴装：YES端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：SILICON SURGE PROTECTORBase Number Matches：1

TISP3200T3BJ 数据手册

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TISP3070T3BJ THRU TISP3395T3BJ  
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS  
The TISP3xxxT3BJ series  
is obsolete and not  
recommended for new designs.  
TISP3xxxT3BJ Overvoltage Protector Series  
Dual High Current Protectors in a Space Efficient  
Package  
SMB Package (Top View)  
- 2 x 100 A 10/560 Current Rating  
1
3
- Modified 3-pin SMB (DO-214AA) Package  
50 % Space Saving over Two SMBs  
- Y Configurations with Two SMB Packages  
2 x 80 A, 10/1000 . . . .TISP3xxxT3BJ + TISP4xxxJ1BJ  
2 x 100 A, 10/700 . . . .TISP3xxxT3BJ + TISP4xxxH3BJ  
2
MDXXCJA  
Device Symbol  
Ion-Implanted Breakdown Region  
- Precise and Stable Voltage  
1
3
(T or R)  
(T or R)  
- Low Voltage Overshoot under Surge  
VDRM  
V(BO)  
Device  
V
V
TISP3070T3  
TISP3080T3  
TISP3095T3  
TISP3115T3  
TISP3125T3  
TISP3145T3  
TISP3165T3  
TISP3180T3  
TISP3200T3  
TISP3219T3  
TISP3250T3  
TISP3290T3  
TISP3350T3  
TISP3395T3  
58  
70  
65  
80  
75  
95  
SD3TAA  
2
(G)  
90  
115  
125  
145  
165  
180  
00  
19  
2
290  
350  
395  
100  
120  
135  
145  
155  
180  
1
220  
75  
Red for International Surge Wave Shapes  
IPPSM  
Wave Shape  
Standard  
A
2/10  
8/20  
GR-1089-CORE  
IEC 61000-4-5  
250  
250  
150  
120  
100  
80  
10/160  
10/700  
10/560  
10/1000  
TIA/EIA-IS-968 (FCC Part 68)  
ITU-T K.20/.21/.45  
TIA/EIA-IS-968 (FCC Part 68)  
GR-1089-CORE  
.......................................UL Recognized Component  
Description  
These dual bidirectional thyristor devices protect central office, access and customer premise equipment against overvoltages on the  
telecom line. The TISP3xxxT3BJ is available in a wide range of voltages and has an 80 A 10/1000 current rating. These protectors have  
been specified mindful of the following standards and recommendations: GR-1089-CORE, TIA/EIA-IS-968, UL 60950, EN 60950, IEC  
60950, ITU-T K.20, K.21 and K.45. The TISP3350T3BJ meets the FCC Part 68 “B” ringer voltage requirement (VDRM = ±275 V). Housed  
in a 3-pin modified SMB (DO-214AA) package, the TISP3xxxT3BJ range is space efficient solution for protection designs of 80 A or less  
which use multiple SMBs.  
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above  
V
DRM are limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the device  
switches into a low-voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted  
current falls below the holding current, IH, level the device switches off and restores normal system operation.  
How To Order  
Device  
Package  
Carrier  
Order As  
TISP3xxxT3BJ  
BJ (3-pin modified SMB/DO-214AA J-Bend)  
R (Embossed Tape Reeled)  
TISP3xxxT3BJR-S  
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115, etc.  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
SEPTEMBER 2001 - REVISED MAY 2011  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
1234567...9

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