Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
POWER TRANSISTORS
TIP35F, AF, BF, CF NPN
TIP36F, AF, BF, CF PNP
TO- 3PF Fully Isolated
Plastic Package
B
C
E
For General Purpose Power Amplifier and Switching Applications.
ABSOLUTE MAXIMUM RATINGS
TIP35F
TIP36F
40
TIP35AF
TIP36AF
60
TIP35BF
TIP36BF
80
TIP35CF
TIP36CF
100
DESCRIPTION
SYMBOL
UNIT
VCEO
VCBO
VEBO
IC
V
V
V
A
A
A
W
Collector Emitter Voltage
Collector Base Voltage
100
40
60
80
5.0
25
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
ICM
40
IB
5.0
125
Base Current Continuous
Collector Power Dissipation at Tc=25ºC
PC
Operating and Storage Junction
Temperature Range
Tj, Tstg
- 65 to +150
ºC
THERMAL CHARACTERISTICS
Rth (j-c)
1.0
ºC/W
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (Tj=25ºC unless specified otherwise)
MIN TYP MAX
DESCRIPTION
SYMBOL
TEST CONDITION
UNIT
*VCEO (sus)
IC=30mA, IB=0
Collector Emitter Sustaining Voltage
40
60
80
V
V
V
V
TIP35F/TIP36F
TIP35AF/TIP36AF
TIP35BF/TIP36BF
TIP35CF/TIP36CF
VCE=30V, IB=0
100
ICEO
Collector Emitter Cut Off Current
1.0
mA
TIP35AF/TIP36AF
VCE=60V, IB=0
1.0
mA
mA
mA
TIP35BF/CF, TIP36BF/CF
VCE=Rated VCEO, VEB=0
ICES
IEBO
*hFE
0.7
Collector Emitter Cut Off Current
Emitter Base Cut Off Current
DC Current Gain
VEB=5V, IC=0
IC=1.5A, VCE=4V
IC=15A, VCE=4V
IC=15A, IB=1.5A
IC=25A, IB=5A
IC=15A, VCE=4V
IC=25A, VCE=4V
IC=1A, VCE=10V
1.0
25
15
75
*VCE (sat)
*VBE (on)
1.8
4.0
2.0
4.0
V
V
Collector Emitter Saturation Voltage
Base Emitter On Voltage
V
V
Transition Frequency
f T
3.0
MHz
*Pulse test: Pulse width 300ms, Duty cycle <2%
TIP35F_36FRev041007E
Data Sheet
Page 1 of 3
Continental Device India Limited