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TIP36A-S PDF预览

TIP36A-S

更新时间: 2024-11-04 20:10:03
品牌 Logo 应用领域
伯恩斯 - BOURNS /
页数 文件大小 规格书
4页 61K
描述
Transistor

TIP36A-S 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.54
最大集电极电流 (IC):25 A配置:Single
最小直流电流增益 (hFE):10最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):125 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

TIP36A-S 数据手册

 浏览型号TIP36A-S的Datasheet PDF文件第2页浏览型号TIP36A-S的Datasheet PDF文件第3页浏览型号TIP36A-S的Datasheet PDF文件第4页 
TIP36, TIP36A, TIP36B, TIP36C  
PNP SILICON POWER TRANSISTORS  
Designed for Complementary Use with the  
TIP35 Series  
SOT-93 PACKAGE  
(TOP VIEW)  
125 W at 25°C CaseTemperature  
25 A Continuous Collector Current  
40 A Peak Collector Current  
B
C
E
1
2
3
Customer-Specified Selections Available  
Pin 2 is in electrical contact with the mounting base.  
MDTRAAA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
TIP36  
-80  
-100  
-120  
-140  
-40  
TIP36A  
TIP36B  
TIP36C  
TIP36  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
VCBO  
V
TIP36A  
TIP36B  
TIP36C  
-60  
VCEO  
V
-80  
-100  
-5  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
-25  
-40  
A
-5  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Ptot  
Ptot  
125  
W
W
mJ  
°C  
°C  
°C  
3.5  
2
½LIC  
90  
Operating junction temperature range  
Tj  
Tstg  
TL  
-65 to +150  
-65 to +150  
250  
Storage temperature range  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.  
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 ,  
BE(off) = 0, RS = 0.1 , VCC = -20 V.  
V
JULY 1968 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

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