TIP36B

更新时间： 2024-11-04 06:01:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
4页	141K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

技术参数
数据手册

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TIP36B 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Base Number Matches：	1

TIP36B 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

TIP36/36A/36B/36C

DESCRIPTION

·With TO-3PN package

·Complement to type TIP35/35A/35B/35C

·DC current gain h_FE=25(Min)@I_C=-1.5A

APPLICATIONS

·Designed for use in general purpose

power amplifier and switching applications.

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

-40

UNIT

TIP36

TIP36A

TIP36B

TIP36C

TIP36

-60

V_CBO

Collector-base voltage

Open emitter

-80

-100

-40

TIP36A

TIP36B

TIP36C

-60

V_CEO

Collector-emitter voltage

Open base

-80

-100

-5

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

-25

Collector current-peak

Base current

-40

-5

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

125

150

-65~150

℃

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

MAX

UNIT

R_{th j-c}

1.0

℃/W

12 3 4

中文翻译

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