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TIP31BS PDF预览

TIP31BS

更新时间: 2024-01-10 13:56:38
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管开关局域网
页数 文件大小 规格书
6页 199K
描述
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

TIP31BS 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.06最大集电极电流 (IC):3 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):40 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

TIP31BS 数据手册

 浏览型号TIP31BS的Datasheet PDF文件第2页浏览型号TIP31BS的Datasheet PDF文件第3页浏览型号TIP31BS的Datasheet PDF文件第4页浏览型号TIP31BS的Datasheet PDF文件第5页浏览型号TIP31BS的Datasheet PDF文件第6页 
Order this document  
by TIP31A/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use in general purpose amplifier and switching applications.  
Collector–Emitter Saturation Voltage —  
= 1.2 Vdc (Max) @ I = 3.0 Adc  
Collector–Emitter Sustaining Voltage —  
V
CE(sat)  
C
V
V
V
= 60 Vdc (Min) — TIP31A, TIP32A  
= 80 Vdc (Min) — TIP31B, TIP32B  
= 100 Vdc (Min) — TIP31C, TIP32C  
CEO(sus)  
CEO(sus)  
CEO(sus)  
High Current Gain — Bandwidth Product  
= 3.0 MHz (Min) @ I = 500 mAdc  
Compact TO–220 AB Package  
f
T
C
*Motorola Preferred Device  
3 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
*MAXIMUM RATINGS  
TIP31A TIP318 TIP31C  
TIP32A TIP32B TIP32C  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
6080100 VOLTS  
40 WATTS  
V
CEO  
60  
60  
80  
80  
100  
100  
V
CB  
V
EB  
5.0  
Collector Current — Continuous  
Peak  
I
C
3.0  
5.0  
Base Current  
I
B
1.0  
Adc  
Total Power Dissipation  
P
D
@ T = 25 C  
40  
0.32  
Watts  
W/ C  
C
Derate above 25 C  
Total Power Dissipation  
P
D
@ T = 25 C  
2.0  
0.016  
Watts  
W/ C  
A
Derate above 25 C  
CASE 221A–06  
TO–220AB  
Unclamped Inductive  
Load Energy (1)  
E
32  
mJ  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
62.5  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
θJA  
3.125  
θJC  
(1) I = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, V  
= 10 V, R = 100 ..  
BE  
C
CC  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995

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