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TIP31C

更新时间: 2024-01-30 14:42:41
品牌 Logo 应用领域
TRSYS 晶体晶体管开关局域网
页数 文件大小 规格书
1页 58K
描述
Plastic-Encapsulated Transistors

TIP31C 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.06最大集电极电流 (IC):3 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):40 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

TIP31C 数据手册

  
Transys  
Electronics  
L
I M I T E D  
TO-220 Plastic-Encapsulated Transistors  
TIP31/31A/31B/31C TRANSISTOR (NPN)  
FEATURES  
TO-220  
Power dissipation  
1. BASE  
PCM:  
2
3
W (Tamb=25)  
2. COLLECTOR  
3. EMITTER  
Collector current  
ICM:  
A
Collector-base voltage  
V(BR)CBO  
1 2 3  
:
TIP31: 40  
TIP31A: 60  
TIP31B: 80  
V
V
V
TIP31C: 100 V  
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
MIN  
MAX  
UNIT  
40  
60  
31  
Collector-base breakdown voltage  
31A  
31B  
31C  
31  
V(BR)CBO  
Ic= 100 µA, IE=0  
V
80  
100  
40  
60  
Collector-emitter breakdown voltage  
31A  
31B  
31C  
V(BR)CEO  
V(BR)EBO  
ICBO  
Ic= 30 mA, IB=0  
IE= 100µA, IC=0  
V
V
80  
100  
5
Emitter-base breakdown voltage  
Collector cut-off current  
VCB= 40V, IE=0  
VCB= 60V, IE=0  
VCB= 80V, IE=0  
VCB= 100V, IE=0  
31  
31A  
31B  
31C  
0.2  
mA  
VCE= 30V , IB= 0  
0.3  
0.3  
Collector cut-off curremt  
31/31A  
31B/31C  
ICEO  
mA  
mA  
VCE= 60V , IB= 0  
IEBO  
VEB=5V, IC=0  
1
Emitter cut-off current  
DC current gain  
hFE(1)  
VCE= 4V, IC= 3A  
VCE= 4V, IC= 1A  
10  
25  
50  
hFE(2)  
VCE(sat)  
VBE(on)  
fT  
IC=3A, IB=375mA  
VCE= 4V, IC=3A  
1.2  
1.8  
V
V
Collector-emitter saturation voltage  
Base-emitter  
voltage  
VCE=10V , IC=500mA  
3
MHZ  
Transition frequency  

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