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TIP31C-BP PDF预览

TIP31C-BP

更新时间: 2024-11-04 05:55:19
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管功率双极晶体管局域网
页数 文件大小 规格书
2页 183K
描述
Silicon NPN Power Transistors

TIP31C-BP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:1.09Is Samacsys:N
最大集电极电流 (IC):3 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

TIP31C-BP 数据手册

 浏览型号TIP31C-BP的Datasheet PDF文件第2页 
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TIP31/31A/31B/31C  
Micro Commercial Components  
Features  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
The complementary PNP types are the TIP32 respectively  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
Marking : Part Number  
Silicon NPN  
Power Transistors  
x
x
Absolute Maximum Ratings @ T  
a
= 25(unless otherwise noted)  
Symbol  
Parameter  
Value  
Unit  
VCBO  
TIP31  
TIP31A  
TIP31B  
TIP31C  
VCEO  
40  
60  
80  
TO-220AB  
V
Collector-base voltage (Open emitter)  
C
B
100  
S
F
40  
60  
80  
100  
5
3
5
1
TIP31  
Q
V
TIP31A  
TIP31B  
TIP31C  
VEBO  
IC  
ICM  
IB  
Collector-emitter voltage (Open base)  
T
A
Emitter-base Voltage (Open collector)  
Collector Current  
V
A
U
1
2
3
Collector Current Pulse  
A
Base Current  
A
H
Total Device Dissipation(Ta=25℃)  
Total Device Dissipation(Tc=25℃)  
Junction Temperature  
W
W
2
40  
150  
PC  
K
TJ  
TSTG  
Storage Temperature Range  
-65 to +150  
V
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
L
J
D
Symbol  
Parameter  
Min  
Max  
Units  
R
G
VCEO(SUS)  
TIP31  
TIP31A  
TIP31B  
TIP31C  
40  
60  
80  
N
PIN 1.  
PIN 2.  
PIN 3.  
BASE  
COLLECTOR  
EMITTER  
Collector-emitter sustaining voltage  
( IC=30mA; IB=0)  
V
100  
DIMENSIONS  
Collector-emitter Saturation Voltage  
( IC=3A IB=0.375A )  
Base-emitter Voltage  
( IC=3A ; VCE=4V )  
Collector cut-off current  
(VCE=40V; VEB=0)  
VCE(sat)  
VBE  
V
V
INCHES  
MM  
1.2  
1.8  
MIN  
14.22  
9.65  
MAX  
NOTE  
DIM  
MIN  
MAX  
.625  
A
B
C
.560  
.380  
.140  
15.88  
10.67  
4.82  
.420  
.190  
ICES  
TIP31  
3.56  
D
F
.020  
.139  
.190  
---  
.045  
.161  
.110  
.250  
.025  
0.51  
3.53  
2.29  
---  
1.14  
4.09  
2.79  
6.35  
0.64  
TIP31A  
TIP31B  
TIP31C  
ICEO  
TIP31/31A  
TIP31B/C  
(VCE=60V; VEB=0)  
(VCE=80V; VEB=0)  
(VCE=100V; VEB=0)  
Collector cut-off current  
(VCE=30V; VEB=0)  
mA  
0.2  
0.3  
G
H
J
.012  
0.30  
mA  
mA  
K
L
.500  
.045  
.580  
.060  
12.70  
1.14  
14.73  
1.52  
(VCE=60V; VEB=0)  
N
.190  
.210  
4.83  
5.33  
Emitter cut-off current  
(VEB=5V; IC=0)  
DC current gain  
(IC=1A ; VCE=4V)  
(IC=3A ; VCE=4V)  
IEBO  
Hfe  
fT  
1.0  
50  
Q
R
S
T
U
V
.100  
.080  
.045  
.230  
-----  
.135  
.115  
.055  
.270  
.050  
-----  
2.54  
2.04  
1.14  
5.84  
-----  
3.43  
2.92  
1.39  
6.86  
1.27  
-----  
25  
10  
Transition frequency  
( IC=0.5A ; VCE=10V)  
MHZ  
3
.045  
1.15  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
1 of 2  
Revision: 5  
2008/01/01  

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