Datasheet > TIP31CE3

TIP31CE3

更新时间： 2024-11-04 05:55:19

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
4页	151K
描述
3A NPN Epitaxial Planar Power Transistor

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数据手册

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TIP31CE3 数据手册

Spec. No. : C609E3

Issued Date : 2003.09.04

Revised Date :

CYStech Electronics Corp.

Page No. : 1/4

3A NPN Epitaxial Planar Power Transistor

TIP31CE3

Description

TIP31CE3 is designed for use in general purpose amplifier and switching applications.

Features

• Low collector-emitter saturation voltage, VCE(sat) = 1.2V(max) @ IC = 3A

• High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min)

• High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA

Symbol

Outline

TIP31CE3

TO-220AB

B：Base

C：Collector

E：Emitter

B C E

Limits

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V^CBO

V^CEO

V^EBO

I^C

100

Collector Current (DC)

Collector Current (Pulse)

Base Current

I^CP

(Note 1)

I^B

Power Dissipation @ T^A=25℃

Power Dissipation @ T^C=25℃

P^D

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Junction Temperature

R^θJA

R^θJC

62.5

3.125

150

°C/W

°C

Storage Temperature

Tstg

-55~+150

°C

≦

Note : 1. Single Pulse , Pw 380µs, Duty 2%.

TIP31CE3

CYStek Product Specification

12 3 4

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