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TIP31CJ3 PDF预览

TIP31CJ3

更新时间: 2024-11-21 01:17:55
品牌 Logo 应用领域
全宇昕 - CYSTEKEC /
页数 文件大小 规格书
6页 317K
描述
3A NPN Epitaxial Planar Power Transistor

TIP31CJ3 数据手册

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Spec. No. : C609J3  
Issued Date : 2014.06.06  
CYStech Electronics Corp.  
Revised Date :  
Page No. : 1/6  
3A NPN Epitaxial Planar Power Transistor  
TIP31CJ3  
Description  
TIP31CJ3 is designed for use in general purpose amplifier and switching applications.  
Features  
Low collector-emitter saturation voltage, VCE(sat) = 0.5V(max) @ IC = 3A  
High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min)  
High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA  
Pb-free lead plating and halogen-free package  
Symbol  
Outline  
TIP31CJ3  
TO-252(DPAK)  
BBase  
B C E  
CCollector  
EEmitter  
Ordering Information  
Device  
Package  
TO-252  
Shipping  
2500 pcs / Tape & Reel  
TIP31CJ3-0-T3-G  
(Pb-free lead plating and halogen-free package)  
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and  
green compound products  
Packing spec, T3:2500 pcs/tape & reel, 13” reel  
Product rank, zero for no rank products  
Product name  
TIP31CJ3  
CYStek Product Specification  

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