Datasheet > TIP31CJ3-0-T3-G

TIP31CJ3-0-T3-G

更新时间： 2024-11-05 01:17:55

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
6页	317K
描述
3A NPN Epitaxial Planar Power Transistor

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中文翻译

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数据手册

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TIP31CJ3-0-T3-G 数据手册

Spec. No. : C609J3

Issued Date : 2014.06.06

CYStech Electronics Corp.

Revised Date :

Page No. : 1/6

3A NPN Epitaxial Planar Power Transistor

TIP31CJ3

Description

TIP31CJ3 is designed for use in general purpose amplifier and switching applications.

Features

• Low collector-emitter saturation voltage, VCE(sat) = 0.5V(max) @ IC = 3A

• High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min)

• High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA

• Pb-free lead plating and halogen-free package

Symbol

Outline

TIP31CJ3

TO-252(DPAK)

B：Base

B C E

C：Collector

E：Emitter

Ordering Information

Device

Package

TO-252

Shipping

2500 pcs / Tape & Reel

TIP31CJ3-0-T3-G

(Pb-free lead plating and halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T3:2500 pcs/tape & reel, 13” reel

Product rank, zero for no rank products

Product name

TIP31CJ3

CYStek Product Specification

12 3 4 5 6

中文翻译

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