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TIP31D PDF预览

TIP31D

更新时间: 2024-11-07 07:04:31
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管开关局域网
页数 文件大小 规格书
2页 225K
描述
Silicon NPN Power Transistors

TIP31D 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.57
Is Samacsys:NBase Number Matches:1

TIP31D 数据手册

 浏览型号TIP31D的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
TIP31D  
DESCRIPTION  
·DC Current Gain -hFE = 25(Min)@ IC= 1A  
·Collector-Emitter Breakdown Voltage-  
: V(BR) CEO= 120V(Min)  
·Complement to Type TIP32D  
APPLICATIONS  
·Designed for use in general purpose amplifier and switching  
applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current-Continuous  
Collector Current-Pulse  
Base Current  
VALUE  
UNIT  
V
160  
120  
V
5
V
3
A
ICM  
5
1
A
IB  
A
Collector Power Dissipation  
TC=25  
PC  
40  
W
Tj  
Junction Temperature  
150  
Storage Ttemperature Range  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
3.125 /W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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