Datasheet > TIP31CF

TIP31CF

更新时间： 2024-11-17 03:59:43

品牌	Logo	应用领域
KEC		晶体晶体管
页数	文件大小	规格书
2页	358K
描述
TRIPLE DIFFUSED NPN TRANSISTOR(GENERAL PURPOSE)

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中文翻译

获取价格

数据手册

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TIP31CF 数据手册

SEMICONDUCTOR

TIP31CF

TRIPLE DIFFUSED NPN TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

FEATURES

DIM MILLIMETERS

10.30 MAX

15.30 MAX

2.70±0.30

0.85 MAX

Φ3.20±0.20

3.00±0.30

12.30 MAX

0.75 MAX

13.60±0.50

3.90 MAX

1.20

·Complementary to TIP32CF.

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

1.30

Collector-Base Voltage

100

2.54

4.50±0.20

6.80

Collector-Emitter Voltage

Emitter-Base Voltage

100

2.60±0.20

10°

25。

Collector Current

Pulse

5。

0.5

I_CP

2.60±0.15

1. BASE

I_B

Base Current

2. COLLECTOR

3. EMITTER

℃

Ta=25℃

Tc=25℃

Collector Power

Dissipation

P_C

TO-220IS

T_j

Junction Temperature

150

T_stg

Storage Temperature Range

-55∼150

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Emitter Sustaining Voltage

Collector Cut-off Current

SYMBOL

V_CEO(SUS)

I_CEO

TEST CONDITION

I_C=30mA, I_B=0

MIN.

TYP.

MAX.

UNIT

100

0.3

200

V_CE=60V, I_B=0

V_CE=100V, V_EB=0

V_BE=5V, I_C=0

μA

I_CES

Collector Cut-off Current

I_EBO

Emitter Cut-off Current

V_CE=4V, I_C=1A

V_CE=4V, I_C=3A

I_C=3A, I_B=375mA

V_CE=4V, I_C=3A

h_FE

DC Current Gain

1.2

1.8

V_CE(sat)

V_BE(on)

f_T

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

V_CE=10V, I_C=500mA f=1MHz

Transition Frequency

3.0

MHz

2002. 6. 14

Revision No : 0

1/2

中文翻译

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