Datasheet > TIP31CBG

TIP31CBG

更新时间： 2024-11-05 11:00:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
61页	394K
描述
3A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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数据手册

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TIP31CBG 数据手册

SEMICONDUCTOR TECHNICAL DATA

. . . designed for use in general purpose amplifier and switching applications.

•

Collector–Emitter Saturation Voltage —

= 1.2 Vdc (Max) @ I = 3.0 Adc

Collector–Emitter Sustaining Voltage —

CE(sat)

•

= 60 Vdc (Min) — TIP31A, TIP32A

= 80 Vdc (Min) — TIP31B, TIP32B

= 100 Vdc (Min) — TIP31C, TIP32C

CEO(sus)

•

High Current Gain — Bandwidth Product

= 3.0 MHz (Min) @ I = 500 mAdc

Compact TO–220 AB Package

*Motorola Preferred Device

3 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

*MAXIMUM RATINGS

TIP31A TIP318 TIP31C

TIP32A TIP32B TIP32C

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

60–80–100 VOLTS

40 WATTS

CEO

100

5.0

Collector Current — Continuous

Peak

3.0

5.0

Base Current

1.0

Adc

Total Power Dissipation

@ T = 25 C

0.32

Watts

W/ C

Derate above 25 C

Total Power Dissipation

@ T = 25 C

2.0

0.016

Watts

W/ C

Derate above 25 C

CASE 221A–06

TO–220AB

Unclamped Inductive

Load Energy (1)

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

62.5

Unit

C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

θJA

3.125

θJC

(1) I = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, V

= 10 V, R

= 100 Ω..

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

3–873

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...61

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