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TIP31C

更新时间： 2024-11-04 07:04:31

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描述
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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TIP31C 数据手册

DC COMPONENTS CO., LTD.

TIP31C

DISCRETE SEMICONDUCTORS

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for use in general purpose amplifier and

switching applications.

TO-220AB

Pinning

1 = Base

2 = Collector

3 = Emitter

.185(4.70)

.173(4.40)

Typ

.405(10.28)

.380(9.66)

Φ.151

Φ(3.83)

.055(1.39)

.045(1.15)

.295(7.49)

.220(5.58)

.625(15.87)

.570(14.48)

.350(8.90)

.330(8.38)

.640

Typ

Absolute Maximum Ratings(TA=25oC)

(16.25)

2 3

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Rating

Unit

100

.562(14.27)

.500(12.70)

.055(1.40)

.045(1.14)

.037(0.95)

.030(0.75)

100

.024(0.60)

.014(0.35)

.100

Typ

(2.54)

Total Power Dissipation(TC=25oC)

Junction Temperature

Storage Temperature

+150

Dimensions in inches and (millimeters)

TSTG

-55 to +150

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified)

Characteristic

Symbol

BVCBO

BVCEO

ICES

Min

Typ

Max

Unit

Test Conditions

IC=1mA, IE=0

Collector-Base Breakdown Volatge

Collector-Emitter Breakdown Voltage

Collector Cutoff Current

100

IC=30mA, IB=0

200

300

µA

VCE=100V, IB=0

VCE=60V, IB=0

ICEO

Emitter Cutoff Current

IEBO

VEB=5V, IC=0

Collector-Emitter Saturation Voltage(1)

Base-Emitter On Voltage(1)

DC Current Gain(1)

VCE(sat)

VBE(on)

hFE1

1.2

1.8

IC=3A, IB=375mA

IC=3A, VCE=4V

IC=1A, VCE=4V

IC=3A, VCE=4V

IC=0.5A, VCE=10V, f=1MHz

hFE2

Transition Frequency

MHz

(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%

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