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TIP31C PDF预览

TIP31C

更新时间: 2024-01-23 11:53:31
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管开关局域网
页数 文件大小 规格书
2页 56K
描述
NPN EXPITAXIAL PLANAR TRANSISTOR

TIP31C 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.06最大集电极电流 (IC):3 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):40 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

TIP31C 数据手册

 浏览型号TIP31C的Datasheet PDF文件第2页 
UTCTIP31C  
NPNEXPITAXIAL PLANAR TRANSISTOR  
NPN EXPITAXIAL PLANAR  
TRANSISTOR  
DESCRIPTION  
The UTC TIP31C is a NPN expitaxial planar transistor,  
designed for using in general purpose amplifier and switching  
applications.  
1
FEATURE  
*Complement to tip32C  
TO-220  
1:BASE 2:COLLECTOR 3:EMITTER  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
V
V
A
Collector Base Voltage  
100  
Collector to Emitter Voltage  
Emitter To Base Voltage  
Collector Current(DC)  
100  
5
3
Collector Current(Pulse)  
Base Current  
Collector Dissipation(Tc=25°C)  
Collector Dissipation(Ta=25°C)  
Junction Temperature  
Storage Temperature  
IC  
IB  
Pc  
Pc  
Tj  
Tstg  
5
1
40  
2
150  
A
A
W
W
°C  
°C  
-65 ~ +150  
ELECTRICAL CHARACTERISTICS (Tc=25°C)  
PARAMETER  
Collector Emitter Sustaining Voltage(*)  
Collect Cutoff Current  
SYMBOL  
BVCEO  
ICES  
TEST CONDITIONS  
MIN  
100  
TYP MAX UNIT  
V
IC=30mA,IB=0  
VCB=100V,VEB=0  
VCE=60V,IB=0  
VBE=5V,Ic=0  
IC=3A,IB=375mA  
IC=3A,VCE=4V  
IC=1A,VCE=4V  
IC=3A,VCE=4V  
IC=0.5A,VCE=10V  
f=1MHz  
200  
0.3  
1
1.2  
1.8  
µA  
mA  
mA  
V
Collector Cutoff Current  
Emitter Cutoff Current  
Collector-Emitter Saturation Voltage(*)  
Base-Emitter On Voltage(*)  
DC Current Gain(*)  
ICEO  
IEBO  
VCE(sat)  
VBE(on)  
hFE  
V
25  
10  
3
50  
Current Gain Bandwidth Product  
fT  
MHz  
*Pulse Test: PW<=300µs,Duty Cycle<=2%  
1
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R203-010,A  

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