Datasheet > TIP31C

TIP31C

更新时间： 2024-11-05 14:49:59

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	794K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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TIP31C 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	100
Collector Current - Continuous：	3	DC current gain - Min：	10
DC current gain - Max：	50	Transition frequency：	3
Package：	TO-220AB	Storage Temperature Range：	-55-150
class：	Transistors

TIP31C 数据手册

TIP31/31A/31B/31C

TO-220 Transistor (NPN)

TO-220

1. BASE

2. COLLECTOR

3. EMITTER

Features

Medium Power Linear Switching Applications

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Dimensions in inches and (millimeters)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

TIP31

TIP31A

TIP31B

TIP31C

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

100

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

P_C

℃

T_j

150

-55to+150

T_stg

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

TIP31

TIP31A

TIP31B

TIP31C

V(BR)_CBO

I_C= 1mA, I_E=0

I_C= 30mA, I_B=0

100

Collector-emitter breakdown voltage *

TIP31

100

TIP31A

TIP31B

TIP31C

V(BR)_CEO

V(BR)_EBO

I_CBO

Emitter-base breakdown voltage

Collector cut-off current

I_E= 1mA, I_C=0

V_CB=40V, I_E=0

TIP31

TIP31A

_CB=60V, I_E=0

_CB=80V, I_E=0

200

μA

TIP31B

TIP31C

_CB=100V, I_E=0

V_CE= 30V, I_B= 0

_CE= 60V, I_B= 0

I_CEO

Collector cut-off current

TIP31/31A

TIP31B/31C

0.3

Emitter cut-off current

DC current gain

I_EBO

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(on)

f_T

V_EB=5V, I_C=0

V_CE= 4V, I_C= 1A

V_CE=4 V, I_C= 3A

I_C=3A, I_B=0.375A

V_CE= 4V, I_C=3A

V_CE=10V , I_C=0.5A

1.2

1.8

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

MH_Z

* Pulse Test: PW≤300µs, Duty Cycle≤2%

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Revision:20170701-P1

mail:lge@lgesemi.com

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