5秒后页面跳转
TIP31C PDF预览

TIP31C

更新时间: 2024-11-04 00:04:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管功率双极晶体管局域网
页数 文件大小 规格书
4页 40K
描述
Medium Power Linear Switching Applications

TIP31C 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-220
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:2.83
Is Samacsys:N最大集电极电流 (IC):3 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):30 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

TIP31C 数据手册

 浏览型号TIP31C的Datasheet PDF文件第2页浏览型号TIP31C的Datasheet PDF文件第3页浏览型号TIP31C的Datasheet PDF文件第4页 
TIP31 Series(TIP31/31A/31B/31C)  
Medium Power Linear Switching Applications  
Complementary to TIP32/32A/32B/32C  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage : TIP31  
40  
60  
80  
V
V
V
V
CBO  
CEO  
EBO  
: TIP31A  
: TIP31B  
: TIP31C  
100  
Collector-Emitter Voltage : TIP31  
40  
60  
80  
V
V
V
V
: TIP31A  
: TIP31B  
: TIP31C  
100  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
5
V
A
I
I
I
3
C
5
A
CP  
B
1
A
P
P
Collector Dissipation (T =25°C)  
40  
2
W
W
°C  
°C  
C
C
Collector Dissipation (T =25°C)  
C
a
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
: TIP31  
I
= 30mA, I = 0  
40  
60  
80  
V
V
V
V
C
B
: TIP31A  
: TIP31B  
: TIP31C  
100  
I
Collector Cut-off Current  
: TIP31/31A  
CEO  
V
V
= 30V, I = 0  
= 60V, I = 0  
B
0.3  
0.3  
mA  
mA  
CE  
CE  
B
: TIP31B/31C  
I
Collector Cut-off Current  
: TIP31  
CES  
V
V
V
V
= 40V, V = 0  
200  
200  
200  
200  
µA  
µA  
µA  
µA  
CE  
CE  
CE  
CE  
EB  
: TIP31A  
: TIP31B  
: TIP31C  
= 60V, V = 0  
EB  
= 80V, V = 0  
EB  
= 100V, V = 0  
EB  
I
Emitter Cut-off Current  
* DC Current Gain  
V
= 5V, I = 0  
1
mA  
EBO  
EB  
C
h
V
V
= 4V, I = 1A  
25  
10  
FE  
CE  
CE  
C
= 4V, I = 3A  
50  
1.2  
1.8  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
I
= 3A, I = 375mA  
V
V
CE  
BE  
C
B
(sat)  
V
V
= 4V, I = 3A  
C
CE  
CE  
f
= 10V, I = 500mA  
3.0  
MHz  
T
C
* Pulse Test: PW300µs, Duty Cycle2%  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

TIP31C 替代型号

型号 品牌 替代类型 描述 数据表
TIP31CTU FAIRCHILD

完全替代

NPN Epitaxial Silicon Transistor
TIP31CG ONSEMI

完全替代

Complementary Silicon Plastic Power Transistors
TIP31C ONSEMI

完全替代

POWER TRANSISTORS COMPLEMENTARY SILICON

与TIP31C相关器件

型号 品牌 获取价格 描述 数据表
TIP31C(TO-220AB) BL Galaxy Electrical

获取价格

100V,3A,Medium Power NPN Bipolar Transistor
TIP31C_06 STMICROELECTRONICS

获取价格

Power transistors
TIP31C_09 UTC

获取价格

NPN EXPITAXIAL PLANAR TRANSISTOR
TIP31C16 MOTOROLA

获取价格

3A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP31C16A MOTOROLA

获取价格

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP31C-6203 RENESAS

获取价格

5A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP31C-6226 RENESAS

获取价格

5A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP31C-6261 RENESAS

获取价格

Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP31C-6264 RENESAS

获取价格

5A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP31C-6265 RENESAS

获取价格

5A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB