5秒后页面跳转
TE28F640B3TC90 PDF预览

TE28F640B3TC90

更新时间: 2024-11-12 22:14:47
品牌 Logo 应用领域
英特尔 - INTEL /
页数 文件大小 规格书
58页 844K
描述
3 Volt Advanced Boot Block Flash Memory

TE28F640B3TC90 数据手册

 浏览型号TE28F640B3TC90的Datasheet PDF文件第2页浏览型号TE28F640B3TC90的Datasheet PDF文件第3页浏览型号TE28F640B3TC90的Datasheet PDF文件第4页浏览型号TE28F640B3TC90的Datasheet PDF文件第5页浏览型号TE28F640B3TC90的Datasheet PDF文件第6页浏览型号TE28F640B3TC90的Datasheet PDF文件第7页 
3 Volt Advanced Boot Block Flash  
Memory  
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3  
Preliminary Datasheet  
Product Features  
Flexible SmartVoltage Technology  
2.7 V–3.6 V Read/Program/Erase  
12 V VPP Fast Production Programming  
2.7 V or 1.65 V I/O Option  
Reduces Overall System Power  
High Performance  
Intel® Flash Data Integrator Software  
Flash Memory Manager  
System Interrupt Manager  
Supports Parameter Storage, Streaming  
Data (e.g., Voice)  
Extended Cycling Capability  
Minimum 100,000 Block Erase Cycles  
Guaranteed  
2.7 V–3.6 V: 70 ns Max Access Time  
Optimized Block Sizes  
Automatic Power Savings Feature  
Typical ICCS after Bus Inactivity  
Standard Surface Mount Packaging  
48-Ball CSP Packages  
Eight 8-KB Blocks for Data,Top or  
Bottom Locations  
Up to One Hundred Twenty-Seven 64-  
KB Blocks for Code  
Block Locking  
40- and 48-Lead TSOP Packages  
VCC-Level Control through WP#  
Low Power Consumption  
—9 mA Typical Read Current  
Absolute Hardware-Protection  
VPP = GND Option  
Density and Footprint Upgradeable for  
common package  
4-, 8-, 16-, 32- and 64-Mbit Densities  
ETOX™ VII (0.18 µ) Flash Technology  
28F160/320/640B3xC  
4-, 8-, 16-, and 32-Mbit also exist on  
ETOX™ V (0.4µ) and/or ETOX ™ VI  
(0.25µ) Flash Technology  
VCC Lockout Voltage  
Extended Temperature Operation  
40 °C to +85 °C  
x8 not recommended for new designs  
Automated Program and Block Erase  
Status Registers  
4-Mbit density not recommended for new  
designs  
The 3 Volt Advanced Boot Block flash memory, manufactured on Intel’s latest 0.18 µm  
technology, represents a feature-rich solution at overall lower system cost. The 3 Volt Advanced  
Boot Block flash memory products in x16 will be available in 48-lead TSOP and 48-ball CSP  
packages. The x8 option of this product family will only be available in 40-lead TSOP and 48-  
ball µBGA* packages. Additional information on this product family can be obtained by  
accessing Intel’s website at: http://www.intel.com/design/flash.  
Notice: This document contains preliminary information on new products in production. The  
specifications are subject to change without notice. Verify with your local Intel sales office that  
you have the latest datasheet before finalizing a design.  
Order Number: 290580-012  
October 2000  

与TE28F640B3TC90相关器件

型号 品牌 获取价格 描述 数据表
TE28F640C3 INTEL

获取价格

3 Volt Intel Advanced+ Boot Block Flash Memory
TE28F640C3BA70 INTEL

获取价格

Advanced+ Boot Block Flash Memory (C3)
TE28F640C3BC100 NUMONYX

获取价格

Flash, 4MX16, 100ns, PDSO48, 12 X 20 MM, TSOP-48
TE28F640C3BC70 INTEL

获取价格

Advanced+ Boot Block Flash Memory (C3)
TE28F640C3BC80 INTEL

获取价格

Advanced+ Boot Block Flash Memory (C3)
TE28F640C3BD70 INTEL

获取价格

Advanced+ Boot Block Flash Memory (C3)
TE28F640C3TA70 INTEL

获取价格

Advanced+ Boot Block Flash Memory (C3)
TE28F640C3TC100 INTEL

获取价格

Flash, 4MX16, 100ns, PDSO48, 12 X 20 MM, TSOP-48
TE28F640C3TC70 INTEL

获取价格

Advanced+ Boot Block Flash Memory (C3)
TE28F640C3TC80 INTEL

获取价格

Advanced+ Boot Block Flash Memory (C3)