Datasheet > TE28F640J3C-110

TE28F640J3C-110

更新时间： 2024-11-12 22:33:23

品牌	Logo	应用领域
英特尔 - INTEL		闪存
页数	文件大小	规格书
72页	909K
描述
Intel StrataFlash Memory (J3)

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TE28F640J3C-110 数据手册

Intel StrataFlash^®Memory (J3)

256-Mbit (x8/x16)

Datasheet

Product Features

■ Performance

■ Architecture

—110/115/120/150 ns Initial Access Speed

—Multi-Level Cell Technology: High

Density at Low Cost

—125 ns Initial Access Speed (256 Mbit

density only)

—High-Density Symmetrical 128-Kbyte

Blocks

—25 ns Asynchronous Page mode Reads

—256 Mbit (256 Blocks) (0.18µm only)

—128 Mbit (128 Blocks)

—64 Mbit (64 Blocks)

—30 ns Asynchronous Page mode Reads

(256Mbit density only)

—32-Byte Write Buffer

—32 Mbit (32 Blocks)

—6.8 µs per byte effective

■ Quality and Reliability

—Operating Temperature:

-40 °C to +85 °C

programming time

■ Software

—Program and Erase suspend support

—100K Minimum Erase Cycles per Block

—0.18 µm ETOX™ VII Process (J3C)

—Flash Data Integrator (FDI), Common

Flash Interface (CFI) Compatible

■ Security

—0.25 µm ETOX™ VI Process (J3A)

■ Packaging and Voltage

—128-bit Protection Register

—64-bit Unique Device Identifier

—64-bit User Programmable OTP Cells

—56-Lead TSOP Package

—64-Ball Intel Easy BGA Package

—Lead-free packages available

—48-Ball Intel VF BGA Package (32 and

—Absolute Protection with V_PEN= GND

—Individual Block Locking

—Block Erase/Program Lockout during

Power Transitions

64 Mbit) (x16 only)

—V_CC2.7 V to 3.6 V

—V_CCQ= 2.7 V to 3.6 V

Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash^®Memory (J3)

device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256-

Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bit-

per-cell storage technology to the flash market segment. Benefits include more density in less space, high-speed

interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future

devices.

Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, the J3 device takes

advantage of over one billion units of flash manufacturing experience since 1987. As a result, J3 components

are ideal for code and data applications where high density and low cost are required. Examples include

networking, telecommunications, digital set top boxes, audio recording, and digital imaging.

By applying FlashFile™ memory family pinouts, J3 memory components allow easy design migrations from

existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel StrataFlash^®

memory (28F640J5 and 28F320J5) devices.

J3 memory components deliver a new generation of forward-compatible software support. By using the

Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density

upgrades and optimized write capabilities of future Intel StrataFlash^®memory devices. Manufactured on Intel^®

0.18 micron ETOX™ VII (J3C) and 0.25 micron ETOX™ VI (J3A) process technology, the J3 memory device

provides the highest levels of quality and reliability.

Notice: This document contains information on new products in production. The specifications are

subject to change without notice. Verify with your local Intel sales office that you have the latest

datasheet before finalizing a design.

Order Number: 290667-021

March 2005

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中文翻译

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与TE28F640J3C-110相关器件

型号	品牌	获取价格	描述	数据表
TE28F640J3C-115	INTEL	获取价格	Intel StrataFlash Memory (J3)
TE28F640J3C-120	INTEL	获取价格	Intel StrataFlash Memory (J3)
TE28F640J3C-125	INTEL	获取价格	Intel StrataFlash Memory (J3)
TE28F640J3C-150	INTEL	获取价格	Intel StrataFlash Memory (J3)
TE28F640J3D75	INTEL	获取价格	Numonyxâ¢ Embedded Flash Memory (J3 v. D)
TE28F640J3D-75	NUMONYX	获取价格	Numonyx™ Embedded Flash Memory (J3 v. D)
TE28F640J3D75A	NUMONYX	获取价格	Flash, 4MX16, 75ns, PDSO56, 14 X 20 MM, TSOP-56
TE28F640J3D75A	MICRON	获取价格	32Mb, 64Mb, 128Mb, 256Mb Monolithic Embedded Parallel NOR Flash Memory
TE28F640J3D75B	NUMONYX	获取价格	Flash, 4MX16, 75ns, PDSO56, 14 X 20 MM, TSOP-56
TE28F640J3D75B	MICRON	获取价格	32Mb, 64Mb, 128Mb, 256Mb Monolithic Embedded Parallel NOR Flash Memory

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