Datasheet > TE28F640C3TC100

TE28F640C3TC100

更新时间： 2024-09-26 07:23:15

品牌	Logo	应用领域
英特尔 - INTEL		光电二极管
页数	文件大小	规格书
76页	1020K
描述
Flash, 4MX16, 100ns, PDSO48, 12 X 20 MM, TSOP-48

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TE28F640C3TC100 数据手册

3-Volt Advanced+ Boot Block Flash

Memory

28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16)

Preliminary Datasheet

Product Features

• Flexible SmartVoltage Technology

—2.7 V–3.6 V Read/Program/Erase

—12 V for Fast Production Programming

• 128-bit Protection Register

—64-bit Unique Device Identifier

—64-bit User Programmable OTP Cells

• 1.65 V–2.5 V or 2.7 V–3.6 V I/O Option

—Reduces Overall System Power

• Extended Cycling Capability

—Minimum 100,000 Block Erase Cycles

• Supports Intel^®Flash Data Integrator

Software

—Flash Memory Manager

—System Interrupt Manager

—Supports Parameter Storage, Streaming

Data (e.g., voice)

• High Performance

—2.7 V–3.6 V: 70 ns Max Access Time

• Optimized Architecture for Code Plus

Data Storage

—Eight 4-Kword Blocks, Top or Bottom

Locations

—Up to One Hundred-Twenty-Seven 32-

Kword Blocks

—Fast Program Suspend Capability

—Fast Erase Suspend Capability

• Automated Word/Byte Program and

Block Erase

—Command User Interface

—Status Registers

• Cross-Compatible Command Support

—Intel Basic Command Set

—Common Flash Interface

• Flexible Block Locking

—Lock/Unlock Any Block

—Full Protection on Power-Up

—WP# Pin for Hardware Block Protection

• Standard Surface Mount Packaging

—48-Ball CSP Packages

—64-Ball Easy BGA Packages

—48-Lead TSOP Package

—V = GND Option

—V Lockout Voltage

• Low Power Consumption

—9 mA Typical Read Power

—7 µA Typical Standby Power with

Automatic Power Savings Feature

• ETOX™ VIII (0.13 µm) Flash

Technology

—32- and 64-Mbit

• 12 V Fast Production Program

• ETOX™ VII (0.18 µm) Flash Technology

—16-, 32-, 64-Mbit

• Extended Temperature Operation

—–40 °C to +85 °C

• ETOX™ VI (0.25 µm) Flash Technology

—8-, 16- and 32-Mbit

The 3-Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.13 µm and

0.18 µm technologies, represents a feature-rich solution for low-power applications. 3-Volt

Advanced+ Boot Block Flash memory devices incorporate low-voltage capability (2.7 V read,

program and erase) with high-speed, low-power operation. Flexible block locking allows any

Notice: This document contains preliminary information on new products in production. The

specifications are subject to change without notice. Verify with your local Intel sales office that

you have the latest datasheet before finalizing a design.

Order Number: 290645-012

October 2001

12 3 4 5 6 7...76

中文翻译

下载PDF

与TE28F640C3TC100相关器件

型号	品牌	获取价格	描述	数据表
TE28F640C3TC70	INTEL	获取价格	Advanced+ Boot Block Flash Memory (C3)
TE28F640C3TC80	INTEL	获取价格	Advanced+ Boot Block Flash Memory (C3)
TE28F640C3TC90	INTEL	获取价格	Flash, 4MX16, 90ns, PDSO48, 12 X 20 MM, TSOP-48
TE28F640C3TD70	INTEL	获取价格	Advanced+ Boot Block Flash Memory (C3)
TE28F640J3A-110	INTEL	获取价格	Intel StrataFlash Memory (J3)
TE28F640J3A-115	INTEL	获取价格	Intel StrataFlash Memory (J3)
TE28F640J3A-120	INTEL	获取价格	Intel StrataFlash Memory (J3)
TE28F640J3A-125	INTEL	获取价格	Intel StrataFlash Memory (J3)
TE28F640J3A-150	INTEL	获取价格	Intel StrataFlash Memory (J3)
TE28F640J3C	INTEL	获取价格	Intel StrataFlash Memory (J3)

与TE28F640C3TC100相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

11
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

14
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

81
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

72

产品中心

服务支持

精选活动

关于我们

帮助中心

TE28F640C3TC100

TE28F640C3TC100 数据手册

与TE28F640C3TC100相关器件

与TE28F640C3TC100相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TE28F640C3TC100

TE28F640C3TC100 数据手册

与TE28F640C3TC100相关器件

与TE28F640C3TC100相关文章

您还可以找

您在本页遇到什么问题？