5秒后页面跳转
TE28F640C3BC70 PDF预览

TE28F640C3BC70

更新时间: 2024-11-13 04:49:27
品牌 Logo 应用领域
英特尔 - INTEL 闪存
页数 文件大小 规格书
68页 1132K
描述
Advanced+ Boot Block Flash Memory (C3)

TE28F640C3BC70 数据手册

 浏览型号TE28F640C3BC70的Datasheet PDF文件第2页浏览型号TE28F640C3BC70的Datasheet PDF文件第3页浏览型号TE28F640C3BC70的Datasheet PDF文件第4页浏览型号TE28F640C3BC70的Datasheet PDF文件第5页浏览型号TE28F640C3BC70的Datasheet PDF文件第6页浏览型号TE28F640C3BC70的Datasheet PDF文件第7页 
£
Intel Advanced+ Boot Block Flash  
Memory (C3)  
28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16)  
Datasheet  
Product Features  
Flexible SmartVoltage Technology  
2.7 V– 3.6 V Read/Program/Erase  
12 V for Fast Production Programming  
128-bit Protection Register  
64 bit Unique Device Identifier  
64 bit User Programmable OTP Cells  
1.65 V–2.5 V or 2.7 V–3.6 V I/O Option  
Extended Cycling Capability  
Minimum 100,000 Block Erase Cycles  
Reduces Overall System Power  
Software  
High Performance  
Intel® Flash Data Integrator (FDI)  
Supports Top or Bottom Boot Storage,  
Streaming Data (e.g., voice)  
Intel Basic Command Set  
Common Flash Interface (CFI)  
2.7 V– 3.6 V: 70 ns Max Access Time  
Optimized Architecture for Code Plus  
Data Storage  
Eight 4 Kword Blocks, Top or Bottom  
Parameter Boot  
Standard Surface Mount Packaging  
48-Ball µBGA*/VFBGA  
Up to One Hundred-Twenty-Seven 32  
Kword Blocks  
Fast Program Suspend Capability  
Fast Erase Suspend Capability  
64-Ball Easy BGA Packages  
48-Lead TSOP Package  
ETOX™ VIII (0.13 µm) Flash  
Flexible Block Locking  
Technology  
Lock/Unlock Any Block  
Full Protection on Power-Up  
WP# Pin for Hardware Block Protection  
16, 32 Mbit  
ETOX™ VII (0.18 µm) Flash Technology  
16, 32, 64 Mbit  
Low Power Consumption  
—9 mA Typical Read  
ETOX™ VI (0.25 µm) Flash Technology  
8, 16 and 32 Mbit  
—7 A Typical Standby with Automatic  
Power Savings Feature (APS)  
Extended Temperature Operation  
40 °C to +85 °C  
The Intel® Advanced+ Book Block Flash Memory (C3) device, manufactured on Intel’s latest  
0.13 µm and 0.18 µm technologies, represents a feature-rich solution for low-power applications.  
The C3 device incorporates low-voltage capability (3 V read, program, and erase) with high-  
speed, low-power operation. Flexible block locking allows any block to be independently locked  
or unlocked. Add to this the Intel® Flash Data Integrator (FDI) software and you have a cost-  
effective, flexible, monolithic code plus data storage solution. Intel® Advanced+ Boot Block Flash  
Memory (C3) products will be available in 48-lead TSOP, 48-ball CSP, and 64-ball Easy BGA  
packages. Additional information on this product family can be obtained by accessing the Intel®  
Flash website: http://www.intel.com/design/flash.  
Notice: This specification is subject to change without notice. Verify with your local Intel sales  
office that you have the latest datasheet before finalizing a design.  
Order Number: 290645-017  
October 2003  

与TE28F640C3BC70相关器件

型号 品牌 获取价格 描述 数据表
TE28F640C3BC80 INTEL

获取价格

Advanced+ Boot Block Flash Memory (C3)
TE28F640C3BD70 INTEL

获取价格

Advanced+ Boot Block Flash Memory (C3)
TE28F640C3TA70 INTEL

获取价格

Advanced+ Boot Block Flash Memory (C3)
TE28F640C3TC100 INTEL

获取价格

Flash, 4MX16, 100ns, PDSO48, 12 X 20 MM, TSOP-48
TE28F640C3TC70 INTEL

获取价格

Advanced+ Boot Block Flash Memory (C3)
TE28F640C3TC80 INTEL

获取价格

Advanced+ Boot Block Flash Memory (C3)
TE28F640C3TC90 INTEL

获取价格

Flash, 4MX16, 90ns, PDSO48, 12 X 20 MM, TSOP-48
TE28F640C3TD70 INTEL

获取价格

Advanced+ Boot Block Flash Memory (C3)
TE28F640J3A-110 INTEL

获取价格

Intel StrataFlash Memory (J3)
TE28F640J3A-115 INTEL

获取价格

Intel StrataFlash Memory (J3)