Datasheet > TC7SH08FUTE85LF

TC7SH08FUTE85LF

更新时间： 2024-11-05 12:02:55

品牌	Logo	应用领域
东芝 - TOSHIBA		栅
页数	文件大小	规格书
7页	174K
描述
2-Input AND Gate

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中文翻译

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数据手册

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TC7SH08FUTE85LF 数据手册

TC7SH08F/FU

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SH08F, TC7SH08FU

2-Input AND Gate

Features

TC7SH08F

•

High speed operation

: t = 4.3ns (typ.) at V

= 5V, 15pF

Low power dissipation : I

= 2 μA (max) at Ta = 25°C

High noise immunity

5.5-V tolerant inputs

: V

= V

= 28% V

(min)

NIH

NIL

Wide operating voltage range : V

= 2 to 5.5 V

(SMV)

TC7SH08FU

Marking

Product name

H 2

(USV)

Weight

SSOP5-P-0.95 : 0.016 g (typ.)

SSOP5-P-0.65A : 0.006 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Supply voltage

Symbol

Rating

Unit

Pin Assignment (top view)

− 0.5 to 7

DC input voltage

DC output voltage

Input diode current

Output diode current

DC output current

− 0.5 to V

+ 0.5

IN B

IN A

GND

OUT

− 20

°C

± 20 (Note1)

± 25

OUT

DC V /ground current

± 50

OUT Y

Power dissipation

200

Storage temperature

Lead temperature (10 s)

− 65 to 150

260

stg

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note1: V_OUT< GND, V_OUT> V_CC

2009-09-09

12 3 4 5 6 7

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