Datasheet > TC7SH126F_09

TC7SH126F_09

更新时间： 2024-09-15 12:22:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	174K
描述
Bus Buffer with 3-STATE Output

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中文翻译

获取价格

数据手册

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TC7SH126F_09 数据手册

TC7SH126F/FU

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SH126F, TC7SH126FU

Bus Buffer with 3-STATE Output

TC7SH126F

Features

•

High speed: t = 3.8 ns (typ.) at V

= 5V, C = 15pF

CC L

Low power dissipation: I

= 2μA (max) at Ta = 25°C

High noise immunity: V

5.5 V tolerant input

= V

= 28% V

(min)

NIH

NIL

Wide operating voltage range: V

= 2 to 5.5 V

TC7SH126FU

(USV)

Weight

SSOP5-P-0.95

: 0.016 g (typ.)

SSOP5-P-0.65A : 0.006 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Marking

Product name

Characteristics

Supply voltage

Symbol

Rating

Unit

−0.5 to 7.0

H C

DC input voltage

DC output voltage

Input diode current

Output diode current

DC output current

−0.5 to V

+ 0.5

OUT

−20

°C

Pin Assignment (top view)

±20 (Note 1)

±25

±50

200

OUT

DC V /ground current

Power dissipation

IN A

GND

Storage temperature

Lead temperature (10 s)

−65 to 150

260

stg

°C

OUT Y

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1:V

< GND, V > V

OUT CC

OUT

2009-09-21

12 3 4 5 6

中文翻译

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