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TC7SH17FU(BRA,F) PDF预览

TC7SH17FU(BRA,F)

更新时间: 2024-11-21 21:08:43
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管逻辑集成电路
页数 文件大小 规格书
6页 179K
描述
NON-INVERT GATE

TC7SH17FU(BRA,F) 技术参数

生命周期:Active包装说明:TSSOP,
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.74系列:LV/LV-A/LVX/H
JESD-30 代码:R-PDSO-G5长度:2 mm
逻辑集成电路类型:BUFFER功能数量:1
输入次数:1端子数量:5
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
传播延迟(tpd):18.5 ns座面最大高度:1.1 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL宽度:1.25 mm
Base Number Matches:1

TC7SH17FU(BRA,F) 数据手册

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TC7SH17F/FU  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7SH17F, TC7SH17FU  
Schmitt Buffer  
TC7SH17F  
Features  
High speed operation : t = 5.5 ns (typ.)  
pd  
at V  
= 5 V, C = 15 pF  
L
CC  
Low power dissipation : I = 2μA (max) at Ta = 25°C  
CC  
Wide operating voltage range: V  
= 2 to 5.5 V  
CC  
High noise immunity  
5.5-V tolerant input  
: V  
= V  
= 28% V  
(min)  
NIH  
NIL  
CC  
TC7SH17FU  
Marking  
Product name  
H L  
Weight  
SSOP5-P-0.95 : 0.016 g (typ.)  
SSOP5-P-0.65A : 0.006 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Pin Assignment (top view)  
Characteristics  
Supply voltage  
Symbol  
Rating  
Unit  
V
0.5 to 7  
0.5 to 7  
V
V
CC  
DC input voltage  
V
IN  
NC  
1
2
3
5
V
CC  
DC output voltage  
Input diode current  
Output diode current  
DC output current  
V
0.5 to V  
+ 0.5  
V
OUT  
CC  
I
20  
mA  
mA  
mA  
mA  
mW  
°C  
IK  
IN A  
GND  
I
±20 (Note 1)  
OK  
I
±25  
±50  
200  
OUT  
4
OUT Y  
DC V /ground current  
CC  
I
CC  
Power dissipation  
P
D
Storage temperature  
Lead temperature (10 s)  
T
stg  
65 to 150  
260  
T
°C  
L
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note1: VOUT <GND, VOUT > VCC  
Start of commercial production  
2007-02  
1
2014-03-01  

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