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TC7SH126FU_09 PDF预览

TC7SH126FU_09

更新时间: 2024-11-05 12:22:59
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 174K
描述
Bus Buffer with 3-STATE Output

TC7SH126FU_09 数据手册

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TC7SH126F/FU  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7SH126F, TC7SH126FU  
Bus Buffer with 3-STATE Output  
TC7SH126F  
Features  
High speed: t = 3.8 ns (typ.) at V  
= 5V, C = 15pF  
pd  
CC L  
Low power dissipation: I  
= 2μA (max) at Ta = 25°C  
CC  
High noise immunity: V  
5.5 V tolerant input  
= V  
= 28% V  
(min)  
NIH  
NIL  
CC  
Wide operating voltage range: V  
= 2 to 5.5 V  
CC  
TC7SH126FU  
(USV)  
Weight  
SSOP5-P-0.95  
: 0.016 g (typ.)  
SSOP5-P-0.65A : 0.006 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Marking  
Product name  
Characteristics  
Supply voltage  
Symbol  
Rating  
Unit  
V
0.5 to 7.0  
0.5 to 7.0  
V
V
CC  
H C  
DC input voltage  
V
IN  
DC output voltage  
Input diode current  
Output diode current  
DC output current  
V
0.5 to V  
+ 0.5  
V
OUT  
CC  
I
20  
mA  
mA  
mA  
mA  
mW  
°C  
IK  
Pin Assignment (top view)  
I
±20 (Note 1)  
OK  
I
±25  
±50  
200  
OUT  
G
1
5
V
CC  
DC V /ground current  
CC  
I
CC  
Power dissipation  
P
D
IN A  
GND  
2
Storage temperature  
Lead temperature (10 s)  
T
65 to 150  
260  
stg  
T
L
°C  
3
4
OUT Y  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1:V  
< GND, V > V  
OUT CC  
OUT  
1
2009-09-21  

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