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TC7SH126FE(TPL3,F) PDF预览

TC7SH126FE(TPL3,F)

更新时间: 2024-11-05 20:40:47
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动光电二极管逻辑集成电路
页数 文件大小 规格书
6页 139K
描述
IC,BUFFER/DRIVER,SINGLE,1-BIT,CMOS,FP,6PIN,PLASTIC

TC7SH126FE(TPL3,F) 技术参数

是否Rohs认证:符合生命周期:End Of Life
包装说明:DFP, FL6,.047,20Reach Compliance Code:unknown
风险等级:5.79Is Samacsys:N
控制类型:ENABLE HIGHJESD-30 代码:R-PDFP-F6
负载电容(CL):50 pF逻辑集成电路类型:BUS DRIVER
最大I(ol):0.004 A位数:1
功能数量:1端子数量:6
最高工作温度:85 °C最低工作温度:-40 °C
输出特性:3-STATE输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:DFP
封装等效代码:FL6,.047,20封装形状:RECTANGULAR
封装形式:FLATPACK包装方法:TAPE AND REEL
电源:2/5.5 VProp。Delay @ Nom-Sup:13 ns
认证状态:Not Qualified子类别:Bus Driver/Transceivers
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:FLAT
端子节距:0.5 mm端子位置:DUAL
Base Number Matches:1

TC7SH126FE(TPL3,F) 数据手册

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TC7SH126FE  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7SH126FE  
Bus Buffer with 3-STATE Output  
Features  
High speed: t = 3.8ns (typ.) at V  
= 5 V, C = 15 pF  
pd  
CC L  
Low power dissipation: I  
= 2μA (max) at Ta = 25°C  
CC  
High noise immunity: V  
5.5 V tolerant input.  
= V  
= 28% V  
(min)  
NIH  
NIL  
CC  
Wide operating voltage range: V  
= 2 to 5.5V  
CC  
(ESV)  
Weight: 0.003 g (typ.)  
Marking  
Pin Assignment (top view)  
Product name  
G
IN A  
GND  
1
2
3
5
V
CC  
H C  
4
OUT Y  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Supply voltage  
Symbol  
Rating  
Unit  
V
0.5 to 7  
0.5 to 7  
V
V
CC  
DC input voltage  
V
IN  
DC output voltage  
Input diode current  
Output diode current  
DC output current  
V
0.5 to V  
+ 0.5  
V
OUT  
CC  
I
20  
mA  
mA  
mA  
mA  
mW  
°C  
IK  
I
±20  
±25  
±50  
150  
(Note1)  
OK  
I
OUT  
DC V /ground current  
CC  
I
CC  
Power dissipation  
P
D
Storage temperature  
T
65 to150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note1: V  
< GND, V > V  
OUT CC  
OUT  
1
2009-09-25  

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