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TC55W400XB7 PDF预览

TC55W400XB7

更新时间: 2024-09-19 21:18:43
品牌 Logo 应用领域
东芝 - TOSHIBA 静态存储器内存集成电路
页数 文件大小 规格书
12页 186K
描述
IC 256K X 16 STANDARD SRAM, 85 ns, PBGA48, 6 X 8 MM, 0.75 MM PITCH, PLASTIC, TFBGA-48, Static RAM

TC55W400XB7 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:BGA
包装说明:TFBGA, BGA48,6X8,30针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.88
最长访问时间:85 nsI/O 类型:COMMON
JESD-30 代码:R-PBGA-B48长度:8 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:48字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA48,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2.5/3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.000001 A最小待机电流:1.5 V
子类别:SRAMs最大压摆率:0.045 mA
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:6.5 mmBase Number Matches:1

TC55W400XB7 数据手册

 浏览型号TC55W400XB7的Datasheet PDF文件第2页浏览型号TC55W400XB7的Datasheet PDF文件第3页浏览型号TC55W400XB7的Datasheet PDF文件第4页浏览型号TC55W400XB7的Datasheet PDF文件第5页浏览型号TC55W400XB7的Datasheet PDF文件第6页浏览型号TC55W400XB7的Datasheet PDF文件第7页 
TC55W400XB5,7  
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS  
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM  
DESCRIPTION  
The TC55W400XB is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits.  
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.3 V  
power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3  
mA/MHz and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 0.5 µA standby  
current (at VDD = 3 V, Ta = 25°C, maximum) when chip enable (CE1 ) is asserted high or (CE2) is asserted low.  
There are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and  
output enable (OE ) provides fast memory access. Data byte control pin ( LB , UB ) provides lower and upper byte  
access. This device is well suited to various microprocessor system applications where high speed, low power and  
battery backup are required. And, with a guaranteed operating range of 40° to 85°C, the TC55W400XB can be  
used in environments exhibiting extreme temperature conditions. The TC55W400XB is available in a plastic  
48-ball BGA.  
FEATURES  
Access Times (maximum at V  
= 2.7 to 3.3 V):  
TC55W400XB  
Low-power dissipation  
DD  
Operating: 9.9 mW/MHz (typical)  
Single power supply voltage of 2.3 to 3.3 V  
Power down features usingCE1 and CE2  
Data retention supply voltage of 1.5 to 3.3 V  
Direct TTL compatibility for all inputs and outputs  
Wide operating temperature range of 40° to 85°C  
Standby Current (maximum):  
5
7
Access Time  
55 ns  
55 ns  
55 ns  
30 ns  
70 ns  
70 ns  
70 ns  
35 ns  
CE1 Access Time  
CE2 Access Time  
OE Access Time  
3.3 V  
10 µA  
3.0 V  
5 µA  
Package:  
P-TFBGA48-0608-0.75BZ (Weight: 0.09 g typ)  
PIN ASSIGNMENT (TOP VIEW)  
PIN NAMES  
48 PIN BGA  
A0~A17  
CE1 , CE2  
R/W  
Address Inputs  
1
2
3
4
5
6
Chip Enable Inputs  
Read/Write Control Input  
Output Enable Input  
Data Byte Control Inputs  
A
B
LB  
OE  
UB  
A0  
A3  
A1  
A4  
A6  
A7  
A2  
CE2  
I/O9  
CE1 I/O1  
I/O2 I/O3  
OE  
LB , UB  
C I/O10 I/O11 A5  
I/O1~I/O16 Data Inputs/Outputs  
D
E
F
V
I/O12 A17  
I/O13 NC  
I/O4  
V
DD  
SS  
DD  
V
Power  
DD  
GND  
NC  
Ground  
V
A16 I/O5  
V
SS  
No Connection  
I/O15 I/O14 A14 A15 I/O6 I/O7  
A12 A13 R/W I/O8  
A9 A10 A11 NC  
G I/O16 NC  
NC A8  
H
2002-03-05 1/12  

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