Datasheet > 存储 > SRAM> TC51WHM516AXGN65

TC51WHM516AXGN65

更新时间： 2024-01-25 18:04:36

品牌	Logo	应用领域
东芝 - TOSHIBA		存储静态存储器栅
页数	文件大小	规格书
11页	199K
描述
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS, 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM

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技术参数
数据手册

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TC51WHM516AXGN65 技术参数

生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	TFBGA,	针数：	48
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.83
Is Samacsys：	N	Base Number Matches：	1

TC51WHM516AXGN65 数据手册

TC51WHM516AXGN65,70

BLOCK DIAGRAM

A10

A11

A12

A13

A14

A15

A16

A17

A18

A19

A20

GND

MEMORY CELL ARRAY

4,096 × 512 × 16

(33,554,432)

I/O1

I/O2

I/O3

I/O4

I/O5

I/O6

I/O7

I/O8

SENSE AMP

I/O9

I/O10

I/O11

I/O12

I/O13

I/O14

I/O15

I/O16

COLUMN ADDRESS

DECODER

COLUMN ADDRESS

BUFFER

REFRESH

ADDRESS

COUNTER

REFRESH

CONTROL

A0 A1 A2 A3 A4 A5 A6 A7 A8

CONTROL SIGNAL

GENERATOR

CE1

CE2

OPERATION MODE

MODE

CE1

CE2

Add

I/O1 to I/O8

I/O9 to I/O16

POWER

Read(Word)

OUT

DDO

Read(Lower Byte)

Read(Upper Byte)

Write(Word)

High-Z

OUT

High-Z

OUT

Write(Lower Byte)

Write(Upper Byte)

Outputs Disabled

Standby

Invalid

High-Z

DDS

Deep Power-down Standby

DDSD

Notes: L = Low-level Input(V ), H = High-level Input(V ), X = V or V , High-Z = High-impedance

2002-03-14 2/11

123 4 5 6 7...11

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