TC51WKM616AXGN75
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Lead-Free
4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
DESCRIPTION
The TC51WKM616AXGN is a 67,108,864-bit pseudo static random access memory(PSRAM) organized as
4,194,304 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high
density, high speed and low power. The device uses dual power supplies(2.6 to 3.3 V for core and 1.7 to 2.2 V for
output buffer). The device also features SRAM-like W/R timing whereby the device is controlled by CE1 , OE , and
WE on asynchronous. The device has the page access operation. Page size is 8 words. The device also supports
deep power-down mode, realizing low-power standby.
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Access Times:
Access Time
FEATURES
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Organized as 4,194,304 words by 16 bits
Dual power supplies(2.6 to 3.3 V for core and
1.7 to 2.2 V for output buffer)
75 ns
75 ns
25 ns
30 ns
CE1 Access Time
OE Access Time
Page Access Time
Package:
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Direct TTL compatibility for all inputs and outputs
Deep power-down mode: Memory cell data invalid
Page operation mode:
Page read operation by 8 words
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Logic compatible with SRAM R/W ( WE ) pin
Standby current
Standby
P-TFBGA48-0811-0.75BZ (Weight:0.155 g typ.)
Lead-Free
100 µA
5 µA
Deep power-down standby
PIN ASSIGNMENT (TOP VIEW)
PIN NAMES
1
2
3
4
5
6
A0 to A21
A0 to A2
Address Inputs
Page Address Inputs
A
B
C
D
E
F
LB
OE
UB
A0
A3
A5
A1
A4
A2
CE2
I/O1
I/O3
I/O1 to I/O16 Data Inputs/Outputs
I/O9
CE1
I/O2
I/O4
CE1
CE2
Chip Enable Input
I/O10 I/O11
A6
Chip select Input
GND I/O12 A17
I/O13 A21
A7
V
DD
WE
Write Enable Input
Output Enable Input
Data Byte Control Inputs
Power Supply for Core
Power Supply for Output Buffer
Ground
V
A16
A15
A13
A10
I/O5 GND
I/O6 I/O7
WE I/O8
A11 A20
DDQ
OE
I/O15 I/O14 A14
LB , UB
G
H
I/O16 A19
A18 A8
A12
A9
V
DD
V
DDQ
(FBGA48)
GND
2005-03-11 1/10