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TC51WKM616AXGN75 PDF预览

TC51WKM616AXGN75

更新时间: 2024-01-24 17:44:35
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
10页 212K
描述
IC 4M X 16 PSEUDO STATIC RAM, 75 ns, PBGA48, 8 X 11 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC, TFBGA-48, Static RAM

TC51WKM616AXGN75 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA, BGA48,6X8,30针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
Base Number Matches:1

TC51WKM616AXGN75 数据手册

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TC51WKM616AXGN75  
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS  
Lead-Free  
4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM  
DESCRIPTION  
The TC51WKM616AXGN is a 67,108,864-bit pseudo static random access memory(PSRAM) organized as  
4,194,304 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high  
density, high speed and low power. The device uses dual power supplies(2.6 to 3.3 V for core and 1.7 to 2.2 V for  
output buffer). The device also features SRAM-like W/R timing whereby the device is controlled by CE1 , OE , and  
WE on asynchronous. The device has the page access operation. Page size is 8 words. The device also supports  
deep power-down mode, realizing low-power standby.  
Access Times:  
Access Time  
FEATURES  
Organized as 4,194,304 words by 16 bits  
Dual power supplies(2.6 to 3.3 V for core and  
1.7 to 2.2 V for output buffer)  
75 ns  
75 ns  
25 ns  
30 ns  
CE1 Access Time  
OE Access Time  
Page Access Time  
Package:  
Direct TTL compatibility for all inputs and outputs  
Deep power-down mode: Memory cell data invalid  
Page operation mode:  
Page read operation by 8 words  
Logic compatible with SRAM R/W ( WE ) pin  
Standby current  
Standby  
P-TFBGA48-0811-0.75BZ (Weight:0.155 g typ.)  
Lead-Free  
100 µA  
5 µA  
Deep power-down standby  
PIN ASSIGNMENT (TOP VIEW)  
PIN NAMES  
1
2
3
4
5
6
A0 to A21  
A0 to A2  
Address Inputs  
Page Address Inputs  
A
B
C
D
E
F
LB  
OE  
UB  
A0  
A3  
A5  
A1  
A4  
A2  
CE2  
I/O1  
I/O3  
I/O1 to I/O16 Data Inputs/Outputs  
I/O9  
CE1  
I/O2  
I/O4  
CE1  
CE2  
Chip Enable Input  
I/O10 I/O11  
A6  
Chip select Input  
GND I/O12 A17  
I/O13 A21  
A7  
V
DD  
WE  
Write Enable Input  
Output Enable Input  
Data Byte Control Inputs  
Power Supply for Core  
Power Supply for Output Buffer  
Ground  
V
A16  
A15  
A13  
A10  
I/O5 GND  
I/O6 I/O7  
WE I/O8  
A11 A20  
DDQ  
OE  
I/O15 I/O14 A14  
LB , UB  
G
H
I/O16 A19  
A18 A8  
A12  
A9  
V
DD  
V
DDQ  
(FBGA48)  
GND  
2005-03-11 1/10  

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