Datasheet > 存储 > SRAM> TC51WHM516AXGN65

TC51WHM516AXGN65

更新时间： 2024-01-08 17:45:04

品牌	Logo	应用领域
东芝 - TOSHIBA		存储静态存储器栅
页数	文件大小	规格书
11页	199K
描述
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS, 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM

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TC51WHM516AXGN65 技术参数

TC51WHM516AXGN65,70

(See Note 8)

UB LB

CONTROLLED)

WRITE CYCLE 3 (

Address

A0 to A20

CE1

CE2

UB , LB

ODW

OUT

Hi-Z

I/O1 to I/O16

COE

(See Note 9)

VALID DATA IN

I/O1 to I/O16

2002-03-14 7/11

1...4 5 678 9 10 11

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型号	品牌	描述	获取价格	数据表
TC51WHM516AXGN70	TOSHIBA	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS, 2,097,152-WORD BY 16-BIT CMOS PS	获取价格
TC51WHM516BXGN70	TOSHIBA	IC 2M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48, 6 X 7 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC,	获取价格
TC51WHM616AXBN65	TOSHIBA	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS	获取价格
TC51WHM616AXBN70	TOSHIBA	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS	获取价格
TC51WHM616AXGN65	TOSHIBA	TC51WHM616AXGN65	获取价格
TC51WHM616AXGN70	TOSHIBA	IC 4M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48, 8 X 11 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC,	获取价格