Datasheet > TC51WKM516AXGN70

TC51WKM516AXGN70

更新时间： 2024-01-05 05:16:05

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
11页	196K
描述
IC 2M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48, 6 X 7 MM, 0.75 MM PITCH, PLASTIC, TFBGA-48, Static RAM

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TC51WKM516AXGN70 技术参数

生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	TFBGA,	针数：	48
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.84
Base Number Matches：	1

TC51WKM516AXGN70 数据手册

TC51WKM516AXGN65,70

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM

DESCRIPTION

The TC51WKM516AXGN is a 33,554,432-bit pseudo static random access memory(PSRAM) organized as

2,097,152 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high

density, high speed and low power. The device uses dual power supplies(2.6 to 3.1 V for core and 1.7 to 2.2 V for

output buffer). The device also features SRAM-like W/R timing whereby the device is controlled by CE1 , OE , and

WE on asynchronous. The device has the page access operation. Page size is 8 words. The device also supports

deep power-down mode, realizing low-power standby.

•

Access Times:

FEATURES

•

Organized as 2,097,152 words by 16 bits

Dual power supplies(2.6 to 3.1 V for core and

1.7 to 2.2 V for output buffer)

TC51WKM516AXGN

•

Direct TTL compatibility for all inputs and outputs

Deep power-down mode: Memory cell data invalid

Page operation mode:

Access Time

CE1 Access Time

OE Access Time

Page Access Time

Package:

65 ns

25 ns

30 ns

70 ns

25 ns

30 ns

Page read operation by 8 words

•

Logic compatible with SRAM R/W ( WE ) pin

Standby current

Standby

70 µA

5 µA

•

Deep power-down standby

P-TFBGA48-6mm × 7mm 0.75mm pitch

(Weight: g

typ.)

PIN ASSIGNMENT (TOP VIEW)

PIN NAMES

A0 to A20

A0 to A2

Address Inputs

Page Address Inputs

CE2

I/O1

I/O3

I/O1 to I/O16 Data Inputs/Outputs

I/O9

CE1

I/O2

I/O4

I/O5

I/O6

CE1

CE2

Chip Enable Input

Chip select Input

I/O10 I/O11

I/O12 A17

I/O13 NC

Write Enable Input

Output Enable Input

Data Byte Control Inputs

Power Supply for Core

Power Supply for Output Buffer

Ground

A16

A15

A13

A10

DDQ

I/O15 I/O14 A14

I/O7

LB , UB

I/O16 A19

A18 A8

A12

WE I/O8

A11 A20

DDQ

(FBGA48)

GND

No Connection

2002-03-05 1/11

12 3 4 5 6 7...11

下载PDF

与TC51WKM516AXGN70相关器件

型号	品牌	描述	获取价格	数据表
TC51WKM516AXGN75	TOSHIBA	IC 2M X 16 PSEUDO STATIC RAM, 75 ns, PBGA48, 6 X 7 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC,	获取价格
TC51WKM516BXGN75	TOSHIBA	IC 2M X 16 PSEUDO STATIC RAM, 75 ns, PBGA48, 6 X 7 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC,	获取价格
TC51WKM616AXBN75	TOSHIBA	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 16-BIT CMOS PSE	获取价格
TC51WKM616AXGN65	TOSHIBA	TC51WKM616AXGN65	获取价格
TC51WKM616AXGN70	TOSHIBA	TC51WKM616AXGN70	获取价格
TC51WKM616AXGN75	TOSHIBA	IC 4M X 16 PSEUDO STATIC RAM, 75 ns, PBGA48, 8 X 11 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC,	获取价格