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TC1N914BM.TB PDF预览

TC1N914BM.TB

更新时间: 2024-10-27 13:14:23
品牌 Logo 应用领域
TAK_CHEONG 整流二极管开关
页数 文件大小 规格书
4页 425K
描述
Rectifier Diode, 1 Element, 0.15A, Silicon, DO-34, HERMETIC SEALED, GLASS, DO-204, 2 PIN

TC1N914BM.TB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-204
包装说明:HERMETIC SEALED, GLASS, DO-204, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.21
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.72 VJEDEC-95代码:DO-34
JESD-30 代码:O-LALF-W2JESD-609代码:e3
最大非重复峰值正向电流:2 A元件数量:1
端子数量:2最高工作温度:175 °C
最大输出电流:0.15 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.5 W
认证状态:Not Qualified最大反向恢复时间:0.004 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

TC1N914BM.TB 数据手册

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TAK CHEONG
®  
SEMICONDUCTOR  
500 mW DO-35 Hermetically  
Sealed Glass Fast Switching  
Diodes  
AXIAL LEAD  
DO35  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
500  
mW  
°C  
DEVICE MARKING DIAGRAM  
TSTG  
Storage Temperature Range  
-65 to +150  
L
xx  
xx  
TJ  
WIV  
IO  
Operating Junction Temperature  
Working Inverse Voltage  
+150  
75  
°C  
V
Average Rectified Current  
150  
450  
mA  
mA  
L
: Logo  
TC1Nxxxx : Device Code  
IFM  
Non-repetitive Peak Forward Current  
Peak Forward Surge Current  
(Pulse Width = 1.0 µsecond)  
IFSURGE  
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.  
Specification Features:  
.
.
.
.
.
.
.
.
.
Fast Switching Device (TRR <4.0 nS)  
DO-35 Package (JEDEC)  
Through-Hole Device Type Mounting  
Hermetically Sealed Glass  
Anode  
Cathode  
Compression Bonded Construction  
All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable  
RoHS Compliant  
ELECTRICAL SYMBOL  
Solder Hot Dip Tin (Sn) Terminal Finish  
Cathode Indicated By Polarity Band  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Limits  
Parameter  
Test Condition  
IR=100µA  
Symbol  
Unit  
Min  
100  
75  
Max  
BV  
Breakdown Voltage  
Reverse Leakage Current  
Forward Voltage  
Volts  
IR=5µA  
IR  
VR=20V  
VR=75V  
IF=5mA  
IF=10mA  
IF=100mA  
25  
5
nA  
µA  
VF  
TC1N4448, TC1N914B  
TC1N4148  
0.62  
0.72  
1.0  
1.0  
Volts  
TC1N4448, TC1N914B  
TRR  
Reverse Recovery Time  
Capacitance  
IF=10mA, VR=6V  
RL=100  
4
4
nS  
pF  
IRR=1mA  
C
VR=0V, f=1MHZ  
Number: DB-036  
Jan 2010 / G  
Page 1  

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