Datasheet > TC1N914BWT

TC1N914BWT

更新时间： 2024-11-21 17:14:59

品牌	Logo	应用领域
德昌 - TC		/
页数	文件大小	规格书
5页	414K
描述
SOD-523

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中文翻译

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TC1N914BWT 数据手册

TAK CHEON

^®

SEMICONDUCTOR

200mW SOD-523 SURFACE MOUNT

Very Small Outline Flat Lead Plastic Package

General Purpose Application

Fast Switching Diode

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

P_D

T_STG

T_J

Power Dissipation

200

-55 to +150

+150

100

°C

Storage Temperature Range

Operating Junction Temperature

Non-Repetitive Peak Reverse Voltage

Repetitive Peak Reverse Voltage

Repetitive Peak Forward Current

Continuous Forward Current

V_RSM

V_RRM

I_FRM

I_O

300

150

Non-repetitive Peak Forward Surge Current

(Pulse Width=1us)

I_FSM

These ratings are limiting values above which the serviceability of the diode may be impaired.

Specification Features:

Fast Switching Device (T_RR<4.0 nS)

General Purpose Diodes

RoHS Compliant

DEVICE MARKING CODE:

Device Type

Device Marking

TC1N4148WT

TC1N4448WT

TC1N914BWT

Green EMC

Matte Tin(Sn) Lead Finish

Band Indicates Cathode

Weight: approx. 0.002g

AEC-Q101 Qualified

Electrical Characteristics

T_A= 25°C unless otherwise noted

Limits

Max

Symbol

Parameter

Test Condition

Unit

Min

100

B_V

I_R

Breakdown Voltage

Reverse Leakage Current

Forward Voltage

I_R=100µA

I_R=5µA

Volts

V_R=20V

µA

V_R=75V

V_F

TC1N4448WT, TC1N914BWT

TC1N4448WT, TC1N4148WT

TC1N4448WT, TC1N914BWT

I_F=5mA

0.62

0.72

1.0

I_F=10mA

I_F=100mA

I_F=10mA

I_R=60mA

R_L=100

I_RR=1mA

V_R=0V, f=1M_HZ

Volts

T_RR

Reverse Recovery Time

Capacitance

Typical Performance Characteristics

Number: DB-001

April 2019, Revision G

Page 1

12 3 4 5

中文翻译

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