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TC1N914BWT PDF预览

TC1N914BWT

更新时间: 2024-11-17 08:27:27
品牌 Logo 应用领域
TAK_CHEONG 整流二极管开关光电二极管
页数 文件大小 规格书
5页 176K
描述
200mW SOD-523 SURFACE MOUNT Fast Switching Diode

TC1N914BWT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.38其他特性:FAST SWITCHES
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-F2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最大输出电流:0.15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:75 V最大反向恢复时间:0.004 µs
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

TC1N914BWT 数据手册

 浏览型号TC1N914BWT的Datasheet PDF文件第2页浏览型号TC1N914BWT的Datasheet PDF文件第3页浏览型号TC1N914BWT的Datasheet PDF文件第4页浏览型号TC1N914BWT的Datasheet PDF文件第5页 
TAK CHEONG®  
SEMICONDUCTOR  
200mW SOD-523 SURFACE MOUNT  
Very Small Outline Flat Lead Plastic Package  
General Purpose Application  
Fast Switching Diode  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
PD  
TSTG  
TJ  
Power Dissipation  
200  
-55 to +150  
+150  
100  
mW  
°C  
°C  
V
Storage Temperature Range  
Operating Junction Temperature  
Non-Repetitive Peak Reverse Voltage  
Repetitive Peak Reverse Voltage  
Repetitive Peak Forward Current  
Continuous Forward Current  
VRSM  
VRRM  
IFRM  
IO  
75  
V
300  
mA  
mA  
150  
Non-repetitive Peak Forward Surge Current  
(Pulse Width=1us)  
IFSM  
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.  
Specification Features:  
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
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Fast Switching Device (TRR <4.0 nS)  
General Purpose Diodes  
DEVICE MARKING CODE:  
Device Type  
Device Marking  
Extremely Small SOD-523 Package  
Flat Lead SOD-523 Small Outline Plastic Package  
Surface Device Type Mounting  
RoHS Compliant  
TC1N4148WT  
TC1N4448WT  
TC1N914BWT  
E1  
E2  
E3  
Green EMC  
Matte Tin(Sn) Lead Finish  
Band Indicates Cathode  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Limits  
Max  
Symbol  
Parameter  
Test Condition  
Unit  
Min  
100  
75  
BV  
Breakdown Voltage  
Reverse Leakage Current  
Forward Voltage  
IR=100µA  
IR=5µA  
Volts  
IR  
VR=20V  
25  
5
nA  
µA  
VR=75V  
VF  
TC1N4448WT, TC1N914BWT  
TC1N4448WT, TC1N4148WT  
TC1N4448WT, TC1N914BWT  
IF=5mA  
0.62  
0.72  
1.0  
1.0  
IF=10mA  
IF=100mA  
IF=10mA  
IR=60mA  
RL=100Ω  
IRR=1mA  
VR=0V, f=1MHZ  
Volts  
TRR  
Reverse Recovery Time  
4
4
nS  
pF  
C
Capacitance  
Number: DB-001  
July 2011, Revision F  
Page 1  

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