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TC1N957C PDF预览

TC1N957C

更新时间: 2024-11-18 19:39:35
品牌 Logo 应用领域
TAK_CHEONG 测试二极管
页数 文件大小 规格书
4页 3729K
描述
Zener Diode, 6.8V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-35, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

TC1N957C 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-35
包装说明:O-LALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.22
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:4.5 ΩJEDEC-95代码:DO-35
JESD-30 代码:O-LALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:6.8 V子类别:Voltage Reference Diodes
表面贴装:NO技术:ZENER
端子面层:Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:2%工作测试电流:18.5 mA
Base Number Matches:1

TC1N957C 数据手册

 浏览型号TC1N957C的Datasheet PDF文件第2页浏览型号TC1N957C的Datasheet PDF文件第3页浏览型号TC1N957C的Datasheet PDF文件第4页 
®
TAK CHEONG  
SEMICONDUCTOR  
500 mW DO-35 Hermetically  
Sealed Glass Zener Voltage  
Regulators  
AXIAL LEAD  
DO35  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
DEVICE MARKING DIAGRAM  
Parameter  
Value  
Units  
L
9x  
xT  
Power Dissipation  
500  
-65 to +200  
+200  
mW  
°C  
Storage Temperature Range  
Operating Junction Temperature  
°C  
L
: Logo  
Device Code : TC1N9xxT  
Tolerance (T) : A = 10%  
: B = 5%  
These ratings are limiting values above which the serviceability of the diode may be impaired.  
: C = 2%  
: D = 1%  
Specification Features:  
.
.
.
.
.
.
.
.
.
Zener Voltage Range 6.8 to 56 Volts  
DO-35 Package (JEDEC)  
Through-Hole Device Type Mounting  
Hermetically Sealed Glass  
Cathode  
Anode  
Compression Bonded Construction  
All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable  
RoHS Compliant  
ELECTRICAL SYMBOL  
Solder Hot Dip Tin (Sn) Lead Finish  
Cathode Indicated By Polarity Band  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
ZZT @ IZT  
()  
Max  
ZZK @ IZK = 0.25mA  
IR @ VR  
(A)  
Max  
VZ @ IZT  
(Volts)  
Nominal  
IZT  
(mA)  
VR  
(Volts)  
Device Type  
()  
Max  
TC1N957B  
TC1N958B  
TC1N959B  
TC1N960B  
TC1N961B  
TC1N962B  
TC1N963B  
TC1N964B  
TC1N965B  
TC1N966B  
TC1N967B  
TC1N968B  
TC1N969B  
TC1N970B  
TC1N971B  
TC1N972B  
TC1N973B  
TC1N974B  
TC1N975B  
TC1N976B  
6.8  
7.5  
8.2  
9.1  
10  
11  
12  
13  
15  
16  
18  
20  
22  
24  
27  
30  
33  
36  
39  
43  
18.5  
16.5  
15  
4.5  
5.5  
6.5  
7.5  
8.5  
9.5  
11.5  
13  
16  
17  
21  
25  
29  
33  
41  
49  
58  
70  
80  
93  
700  
700  
700  
700  
700  
700  
700  
700  
700  
700  
750  
750  
750  
750  
750  
1000  
1000  
1000  
1000  
1500  
150  
75  
50  
25  
10  
5
5
5
5
5
5
5
5
5
5
5
5
5
5.2  
5.7  
6.2  
6.9  
7.6  
8.4  
9.1  
9.9  
11.4  
12.2  
13.7  
15.2  
16.7  
18.2  
20.6  
22.8  
25.1  
27.4  
29.7  
32.7  
14  
12.5  
11.5  
10.5  
9.5  
8.5  
7.8  
7
6.2  
5.6  
5.2  
4.6  
4.2  
3.8  
3.4  
3.2  
3
5
5
Number: DB-210  
January 2010/ C  
Page 1  

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