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TC1N914BMT26B PDF预览

TC1N914BMT26B

更新时间: 2024-10-27 14:21:11
品牌 Logo 应用领域
TAK_CHEONG /
页数 文件大小 规格书
4页 424K
描述
Rectifier Diode,

TC1N914BMT26B 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
Base Number Matches:1

TC1N914BMT26B 数据手册

 浏览型号TC1N914BMT26B的Datasheet PDF文件第2页浏览型号TC1N914BMT26B的Datasheet PDF文件第3页浏览型号TC1N914BMT26B的Datasheet PDF文件第4页 
TAK CHEONG
®  
SEMICONDUCTOR  
300 mW DO-34 Hermetically  
Sealed Glass Fast Switching  
Diodes  
AXIAL LEAD  
DO34  
DEVICE MARKING DIAGRAM  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
(TC1N4148M)  
Symbol  
Parameter  
Value  
Units  
PD  
TSTG  
TJ  
Power Dissipation  
300  
-65 to +150  
+150  
mW  
°C  
Storage Temperature Range  
Operating Junction Temperature  
Working Inverse Voltage  
L
: Logo  
°C  
WIV  
IO  
75  
V
DEVICE MARKING DIAGRAM  
(TC1N4448M / TC1N914BM)  
Average Rectified Current  
150  
mA  
mA  
IFM  
Non-repetitive Peak Forward Current  
450  
Peak Forward Surge Current  
(Pulse Width = 1.0 µsecond)  
IFSURGE  
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.  
L
: Logo  
Device Code : TC1NxxxxM  
Specification Features:  
.
.
.
.
.
.
.
.
.
Fast Switching Device (TRR <4.0 nS)  
DO-34 Package (JEDEC DO-204)  
Through-Hole Device Type Mounting  
Hermetically Sealed Glass  
Anode  
Cathode  
Compression Bonded Construction  
All External Surfaces Are Corrosion Resistant And Lads Are Readily Solderable  
RoHS Compliant  
ELECTRICAL SYMBOL  
Solder Hot Dip Tin (Sn) Terminal Finish  
Cathode Indicated By Polarity Band  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Limits  
Parameter  
Test Condition  
IR=100µA  
Symbol  
Unit  
Min  
Max  
BV  
Breakdown Voltage  
Reverse Leakage Current  
Forward Voltage  
100  
75  
Volts  
IR=5µA  
IR  
VR=20V  
25  
5
nA  
µA  
VR=75V  
VF  
TC1N4448M, TC1N914BM  
TC1N4148M, TC1N4148M  
TC1N4448M, TC1N914BM  
IF=5mA  
0.62  
0.72  
1.0  
1.0  
IF=10mA  
Volts  
IF=100mA  
IF=10mA, VR=6V  
RL=100  
IRR=1mA  
TRR  
Reverse Recovery Time  
Capacitance  
4
4
nS  
pF  
C
VR=0V, f=1MHZ  
Number: DB-050  
Jan 2010 / F  
Page 1  

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