Datasheet > TC1N914BMT26B

TC1N914BMT26B

更新时间： 2024-10-27 14:21:11

品牌	Logo	应用领域
TAK_CHEONG		/
页数	文件大小	规格书
4页	424K
描述
Rectifier Diode,

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中文翻译

获取价格

技术参数
数据手册

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TC1N914BMT26B 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.76
Base Number Matches：	1

TC1N914BMT26B 数据手册

TAK CHEONG

^®

SEMICONDUCTOR

300 mW DO-34 Hermetically

Sealed Glass Fast Switching

Diodes

AXIAL LEAD

DO34

DEVICE MARKING DIAGRAM

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

(TC1N4148M)

Symbol

Parameter

Value

Units

P_D

T_STG

T_J

Power Dissipation

300

-65 to +150

+150

°C

Storage Temperature Range

Operating Junction Temperature

Working Inverse Voltage

: Logo

°C

W_IV

I_O

DEVICE MARKING DIAGRAM

(TC1N4448M / TC1N914BM)

Average Rectified Current

150

I_FM

Non-repetitive Peak Forward Current

450

Peak Forward Surge Current

(Pulse Width = 1.0 µsecond)

I_FSURGE

These ratings are limiting values above which the serviceability of the diode may be impaired.

: Logo

Device Code : TC1NxxxxM

Specification Features:

Fast Switching Device (T_RR<4.0 nS)

DO-34 Package (JEDEC DO-204)

Through-Hole Device Type Mounting

Hermetically Sealed Glass

Anode

Cathode

Compression Bonded Construction

All External Surfaces Are Corrosion Resistant And Lads Are Readily Solderable

RoHS Compliant

ELECTRICAL SYMBOL

Solder Hot Dip Tin (Sn) Terminal Finish

Cathode Indicated By Polarity Band

Electrical Characteristics

T_A= 25°C unless otherwise noted

Limits

Parameter

Test Condition

I_R=100µA

Symbol

Unit

Min

Max

B_V

Breakdown Voltage

Reverse Leakage Current

Forward Voltage

100

Volts

I_R=5µA

I_R

V_R=20V

µA

V_R=75V

V_F

TC1N4448M, TC1N914BM

TC1N4148M, TC1N4148M

TC1N4448M, TC1N914BM

I_F=5mA

0.62

0.72

1.0

I_F=10mA

Volts

I_F=100mA

I_F=10mA, V_R=6V

R_L=100

I_RR=1mA

T_RR

Reverse Recovery Time

Capacitance

V_R=0V, f=1M_HZ

Number: DB-050

Jan 2010 / F

Page 1

12 3 4

中文翻译

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