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TC1N914BWS PDF预览

TC1N914BWS

更新时间: 2024-10-27 13:14:27
品牌 Logo 应用领域
TAK_CHEONG 整流二极管开关
页数 文件大小 规格书
4页 425K
描述
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SC-90, 2 PIN

TC1N914BWS 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-90包装说明:R-PDSO-F2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.67配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F2元件数量:1
端子数量:2最大输出电流:0.15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:75 V最大反向恢复时间:0.004 µs
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

TC1N914BWS 数据手册

 浏览型号TC1N914BWS的Datasheet PDF文件第2页浏览型号TC1N914BWS的Datasheet PDF文件第3页浏览型号TC1N914BWS的Datasheet PDF文件第4页 
TAK CHEONG
®  
SEMICONDUCTOR  
500 mW DO-35 Hermetically  
Sealed Glass Fast Switching  
Diodes  
AXIAL LEAD  
DO35  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
500  
mW  
°C  
DEVICE MARKING DIAGRAM  
TSTG  
Storage Temperature Range  
-65 to +150  
L
xx  
xx  
TJ  
WIV  
IO  
Operating Junction Temperature  
Working Inverse Voltage  
+150  
75  
°C  
V
Average Rectified Current  
150  
450  
mA  
mA  
L
: Logo  
TC1Nxxxx : Device Code  
IFM  
Non-repetitive Peak Forward Current  
Peak Forward Surge Current  
(Pulse Width = 1.0 µsecond)  
IFSURGE  
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.  
Specification Features:  
.
.
.
.
.
.
.
.
.
Fast Switching Device (TRR <4.0 nS)  
DO-35 Package (JEDEC)  
Through-Hole Device Type Mounting  
Hermetically Sealed Glass  
Anode  
Cathode  
Compression Bonded Construction  
All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable  
RoHS Compliant  
ELECTRICAL SYMBOL  
Solder Hot Dip Tin (Sn) Terminal Finish  
Cathode Indicated By Polarity Band  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Limits  
Parameter  
Test Condition  
IR=100µA  
Symbol  
Unit  
Min  
100  
75  
Max  
BV  
Breakdown Voltage  
Reverse Leakage Current  
Forward Voltage  
Volts  
IR=5µA  
IR  
VR=20V  
VR=75V  
IF=5mA  
IF=10mA  
IF=100mA  
25  
5
nA  
µA  
VF  
TC1N4448, TC1N914B  
TC1N4148  
0.62  
0.72  
1.0  
1.0  
Volts  
TC1N4448, TC1N914B  
TRR  
Reverse Recovery Time  
Capacitance  
IF=10mA, VR=6V  
RL=100  
4
4
nS  
pF  
IRR=1mA  
C
VR=0V, f=1MHZ  
Number: DB-036  
Jan 2010 / G  
Page 1  

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