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T1G2028536-FSEVB1 PDF预览

T1G2028536-FSEVB1

更新时间: 2024-09-20 01:13:39
品牌 Logo 应用领域
TRIQUINT /
页数 文件大小 规格书
13页 980K
描述
285W, 36V DC – 2 GHz, GaN RF Power Transistor

T1G2028536-FSEVB1 数据手册

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T1G2028536-FS  
285W, 36V DC – 2 GHz, GaN RF Power Transistor  
Applications  
Military radar  
Civilian radar  
Professional and military radio communications  
Test instrumentation  
Wideband or narrowband amplifiers  
GPS Communications  
Avionics  
Product Features  
Functional Block Diagram  
Frequency: DC to 2.0 GHz  
Output Power (P3dB): 260 W at 1.2 GHz  
Linear Gain: 18 dB at 1.2 GHz  
Operating Voltage: 36 V  
Low thermal resistance package  
General Description  
Pin Configuration  
The TriQuint T1G2028536-FS is a 285 W (P3dB) discrete  
GaN on SiC HEMT which operates from DC to 2 GHz.  
The device is constructed with TriQuint’s proven  
TQGaN25HV process, which features advanced field  
plate techniques to optimize power and efficiency at high  
drain bias operating conditions. This optimization can  
potentially lower system costs in terms of fewer amplifier  
line-ups and lower thermal management costs.  
Pin No.  
1
Label  
VD / RF OUT  
VG / RF IN  
Source  
2
Flange  
Lead-free and ROHS compliant  
Evaluation boards are available upon request.  
Ordering Information  
Part ECCN  
Description  
Packaged part  
Flangeless  
T1G2028536-FS EAR99  
T1G2028536-FS-  
EAR99  
1.2 – 1.4 GHz  
Evaluation Board  
EVB1  
Datasheet: Rev A 10-17-13  
Disclaimer: Subject to change without notice  
- 1 of 13 -  
© 2013 TriQuint  
www.triquint.com  

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