Datasheet > T1G3000532-SM

T1G3000532-SM

更新时间： 2024-11-11 01:13:39

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
21页	1683K
描述
5W, 32V, 0.03 â 3.5 GHz, GaN RF Input-Matched Transistor

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T1G3000532-SM 数据手册

T1G3000532-SM

5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor

Applications

• Military radar

• Civilian radar

• Professional and military radio communications

• Test instrumentation

• Wideband or narrowband amplifiers

• Jammers

Product Features

Functional Block Diagram

• Frequency: 30 MHz to 3.5 GHz

• Output Power (P_3dB): 5.7 W at 3.0 GHz

• Linear Gain: 15.7 dB at 3 GHz

• Typical PAE_3dB: 64.7% at 3GHz

• Operating Voltage: 32 V

• Low thermal resistance package

• CW and Pulse capable

General Description

Pin Configuration

Pin No.

20 - 21

Label

V_D/ RF OUT

The TriQuint T1G3000532-SM is a 5W (P_3dB), 50 input

matched discrete GaN on SiC HEMT which operates

from 30MHz to 3.5 GHz. The device is constructed with

TriQuint’s proven TQGaN25 process, which features

advanced field plate techniques to optimize power and

efficiency at high drain bias operating conditions. This

optimization can potentially lower system costs in terms

of fewer amplifier line-ups and lower thermal

management costs.

V_G/ RF IN

Off-chip Shunt Cap for Low-

Frequency Gain

Back side

Source

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Ordering Information

Part ECCN

Description

T1G3000532-SM EAR99

QFN Packaged Part

T1G3000532-SM-

EAR99

0.5 – 3 GHz EVB

EVB

Datasheet: Rev 001- 06-13-14

Disclaimer: Subject to change without notice

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