Datasheet > T1G4020036-FLEVB1

T1G4020036-FLEVB1

更新时间： 2024-09-20 01:13:39

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
21页	1881K
描述
2 x 120W Peak Power, 2 x24W Average Power, 36V DC â 3.5 GHz, GaN RF Power Transistor

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T1G4020036-FL

2 x 120W Peak Power, 2 x24W Average Power,

36V DC – 3.5 GHz, GaN RF Power Transistor

Applications

• Military radar

• Civilian radar

• Professional and military radio communications

• Test instrumentation

• Wideband or narrowband amplifiers

• Jammers

Product Features

Functional Block Diagram

• Frequency: DC to 3.5 GHz

• Output Power (P_3dB): 260 W Peak

(48 Watts Avg.) at 2.9 GHz

• Linear Gain: 16 dB typical at 2.9 GHz

• Operating Voltage: 36 V

• Low thermal resistance package

General Description

Pin Configuration

The TriQuint T1G4020036-FL is a 240 W Peak (48 W

Avg.) (P_3dB) discrete GaN on SiC HEMT which operates

from DC to 3.5 GHz. The device is constructed with

TriQuint’s proven TQGaN25HV process, which features

advanced field plate techniques to optimize power and

efficiency at high drain bias operating conditions. This

optimization can potentially lower system costs in terms

of fewer amplifier line-ups and lower thermal

management costs.

Pin No.

1, 4

Label

V_D/ RF OUT

V_G/ RF IN

Source

2, 5

Flange

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Ordering Information

Part

ECCN

Description

Packaged part

Flangeless

T1G4020036-FL

3A001b.3.b

T1G4020036-FL-

EVB1

2.9-3.3 GHz

Evaluation Board

EAR99

Datasheet: Rev B 11-24-14

Disclaimer: Subject to change without notice

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