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T1G4004532-FL_15 PDF预览

T1G4004532-FL_15

更新时间: 2024-09-20 01:13:39
品牌 Logo 应用领域
TRIQUINT /
页数 文件大小 规格书
13页 1255K
描述
45W, 32V DC – 3.5 GHz, GaN RF Power Transistor

T1G4004532-FL_15 数据手册

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T1G4004532-FL  
45W, 32V DC – 3.5 GHz, GaN RF Power Transistor  
Applications  
Military radar  
Civilian radar  
Professional and military radio communications  
Test instrumentation  
Wideband or narrowband amplifiers  
Jammers  
Product Features  
Functional Block Diagram  
Frequency: DC to 3.5 GHz  
Output Power (P3dB): 45 W at 3.3 GHz  
Linear Gain: >19 dB at 3.3 GHz  
Operating Voltage: 32 V  
Low thermal resistance package  
General Description  
Pin Configuration  
The TriQuint T1G4004532-FL is a 45W (P3dB) discrete  
GaN on SiC HEMT which operates from DC to 3.5 GHz.  
The device is constructed with TriQuint’s proven  
TQGaN25 process, which features advanced field plate  
techniques to optimize power and efficiency at high drain  
bias operating conditions. This optimization can  
potentially lower system costs in terms of fewer amplifier  
line-ups and lower thermal management costs.  
Pin No.  
1
Label  
VD / RF OUT  
VG / RF IN  
Source  
2
Flange  
Lead-free and ROHS compliant  
Evaluation boards are available upon request.  
Ordering Information  
Part  
ECCN  
Description  
Packaged part  
Flanged  
T1G4004532-FL  
EAR99  
T1G4004532-FL-  
EVB1  
2.7-3.5 GHz  
Evaluation Board  
EAR99  
Datasheet: RevA  
Disclaimer: Subject to change without notice  
- 1 of 13 -  
© 2014 TriQuint  
www.triquint.com  

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