Datasheet > T1G6000528-Q3-EVB3

T1G6000528-Q3-EVB3

更新时间： 2024-09-19 12:23:51

品牌	Logo	应用领域
TRIQUINT		晶体晶体管射频
页数	文件大小	规格书
16页	1629K
描述
7W, 28V, DC â 6 GHz, GaN RF Power Transistor

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T1G6000528-Q3

7W, 28V, DC – 6 GHz, GaN RF Power Transistor

Applications

Available Package

•ꢀ Widebandꢀandꢀnarrowbandꢀdefenseꢀandꢀ

commercial communication systems

– General Purpose RF Power

– Jammers

– Radar

– Professionalꢀradioꢀsystems

– WiMAX

– Widebandꢀampliﬁers

– Test instrumentation

– Cellularꢀinfrastructure

Product Features

Package Information

Package Type

Description

Base

•ꢀ Frequency:ꢀDCꢀtoꢀ6ꢀGHz

5.0mmꢀxꢀ4.0mmꢀceramicꢀairꢀ

cavityꢀstraightꢀleadꢀpackage

CuMo

•ꢀ LinearꢀGain:ꢀ>10ꢀdBꢀatꢀ6ꢀGHz

•ꢀ OperatingꢀVoltage:ꢀ28ꢀVꢀ

•ꢀ OutputꢀPowerꢀ(P_3dB):ꢀ>7ꢀWꢀatꢀ6ꢀGHzꢀ

•ꢀ Lead-freeꢀandꢀRoHSꢀcompliant

•ꢀ Lowꢀthermalꢀresistanceꢀpackage

Ordering Information

General Description

Material No.

Part No.

Description

ECCN

TheꢀTriQuintꢀT1G6000528-Q3ꢀisꢀaꢀ7ꢀWꢀ(P_3dB) discrete

GaNꢀonꢀSiCꢀHEMTꢀwhichꢀoperatesꢀfromꢀDCꢀtoꢀ6ꢀGHzꢀ

andꢀtypicallyꢀprovidesꢀ>10ꢀdBꢀgainꢀatꢀ6ꢀGHz.ꢀTheꢀ

deviceꢀ isꢀ constructedꢀ withꢀ TriQuint’sꢀ provenꢀ 0.25ꢀ

µmꢀ productionꢀ process,ꢀ whichꢀ featuresꢀ advancedꢀ

ﬁeldꢀplateꢀtechniquesꢀtoꢀoptimizeꢀpowerꢀandꢀeﬃ-

ciency at high drain bias operating conditions. This

optimizationꢀcanꢀpotentiallyꢀlowerꢀsystemꢀcostsꢀinꢀ

termsꢀofꢀfewerꢀampliﬁerꢀline-upsꢀandꢀlowerꢀthermalꢀ

management costs.

1075579

T1G6000528-Q3

Packagedꢀpart EAR99

1081733

T1G6000528-Q3-

EVB3ꢀ

Narrowband

3.0ꢀtoꢀ3.5ꢀGHzꢀ

evaluation

board

EAR99

Released Datasheet: Rev. K 8/11/2011

– 1 –

Disclaimer: Subject to change without notice

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