Datasheet > SUF-5000

SUF-5000

更新时间： 2024-11-02 03:30:43

品牌	Logo	应用领域
SIRENZA		放大器
页数	文件大小	规格书
4页	110K
描述
0.1-3.7 GHz, Cascadable pHEMT MMIC Amplifier

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SUF-5000 数据手册

Preliminary

SUF-5000

0.1-3.7 GHz, Cascadable pHEMT

MMIC Amplifier

Product Description

Sirenza Microdevices’ SUF-5000 is a monolithically matched broadband

high IP3 gain block covering 0.1 - 3.7 GHz. This pHEMT FET-based

amplifier uses a patented self-bias Darlington topology featuring a gain

and temperature compensating active bias network that operates from

a single 5V supply. It offers efficient, cascadable performance in a

compact 0.88 x 0.86 mm²die. It is well-suited for RF, LO, and IF driver

applications.

Product Features

• Broadband Performance

• High Gain = 19.0 dB @ 2 GHz

• P1dB = 22 dBm @ 2 GHz

• Low-noise, Efficient Gain Block

• 5V Operation, No Dropping Resistor

• Low Gain Variation vs. Temperature

• Patented Thermal Design

Gain & Return Loss vs. Frequency

(GSG Probe Data)

-5

• Patented Self-Bias Darlington Circuit

GAIN

ORL

-10

-15

-20

-25

-30

Applications

• Broadband Communications

IRL

• Test Instrumentation

• Military & Space

• LO and IF Mixer Applications

• High IP3 RF Driver Applications

Frequency (Ghz)

Symbol

Parameters

Small Signal Power Gain

Units

Frequency

Min.

Typ.

Max.

2 GHz

4 GHz

2 GHz

4 GHz

2 GHz

4 GHz

2 GHz

4 GHz

2 GHz

4 GHz

2 GHz

4 GHz

2 GHz

4 GHz

19.0

17.0

22.0

34.5

G_p

P1dB

OIP3

Output Power at 1dB Compression

Output Third Order Intercept Point

Noise Figure

dBm

3.2

3.6

-19.0

-15.0

-13.0

-12.0

-24.0

IRL

Input Return Loss

ORL

Isol

Output Return Loss

Reverse Isolation

-23.0

5.0

V_D

I_D

Device Operating Voltage

Device Operating Current

Gain Variation vs.Temperature

dB/°C

°C/W

-0.01

133

ΔG/ΔT

Rth, j-l

Thermal Resistance (junction to backside)

Test Conditions:

Test Co^Sn⁼d⁵i^.t⁰i^Vo^,n^I^Ds⁼: ^{90mA OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm}

V_S= 5 V

I_D= 80 mA Typ.

OIP₃Tone Spacing = 1 MHz, Pout per tone = 0 dBm

Measured with Bias Tees

T = 25ºC

Z = Z = 50 Ohms

Z = Z = 50 Ohms, 25C, GSG Probe Da_Sta With Bias Tees

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this

information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or

granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights

reserved.

303 S. Technology Ct.

Broomfield, CO 80021

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-105419 Rev B

12 3 4

中文翻译

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